A 12-MHz Data Cycle 4-Mb DRAM with Pipeline Operation

Natsuki Kushiyama, Yohji Watanabe, Takashi Ohsawa, Kazuyoshi Muraoka, Tohru Furuyama, Yousei Nagahama

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    A 12-MHz data-cycle 4-Mb DRAM with pipeline operation has been designed and fabricated using 0.8-μm twin-tub CMOS technology. The pipeline DRAM outputs data corresponding to addresses that were accepted in the previous [formula omitted] cycle. The latter half of the previous read operation and the first half of the next read operation take place simultaneously, so the [formula omitted] cycle time is reduced. This pipeline DRAM technology needs no additional chip area and no process modification. A 95-ns [formula omitted] cycle time was obtained under worst conditions while this value is 125 ns for conventional DRAM's.

    Original languageEnglish
    Pages (from-to)479-483
    Number of pages5
    JournalIEEE Journal of Solid-State Circuits
    Volume26
    Issue number4
    DOIs
    Publication statusPublished - 1991 Apr

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Kushiyama, N., Watanabe, Y., Ohsawa, T., Muraoka, K., Furuyama, T., & Nagahama, Y. (1991). A 12-MHz Data Cycle 4-Mb DRAM with Pipeline Operation. IEEE Journal of Solid-State Circuits, 26(4), 479-483. https://doi.org/10.1109/4.75042