Abstract
The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.
Original language | English |
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Pages (from-to) | 46-50 |
Number of pages | 5 |
Journal | Scripta Materialia |
Volume | 167 |
DOIs | |
Publication status | Published - 2019 Jul 1 |
Keywords
- Directional solidification
- Grain boundary
- Multicrystalline Si
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys