A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

Lu Chung Chuang; Kensaku Maeda; Keiji Shiga; Haruhiko Morito; Kozo Fujiwara

doi:10.1016/j.scriptamat.2019.03.037

A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

Lu Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.

Original language	English
Pages (from-to)	46-50
Number of pages	5
Journal	Scripta Materialia
Volume	167
DOIs	https://doi.org/10.1016/j.scriptamat.2019.03.037
Publication status	Published - 2019 Jul 1

Keywords

Directional solidification
Grain boundary
Multicrystalline Si

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2019.03.037

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title = "A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification",

abstract = "The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.",

keywords = "Directional solidification, Grain boundary, Multicrystalline Si",

author = "Chuang, {Lu Chung} and Kensaku Maeda and Keiji Shiga and Haruhiko Morito and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) — “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2019",

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doi = "10.1016/j.scriptamat.2019.03.037",

language = "English",

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AU - Chuang, Lu Chung

AU - Maeda, Kensaku

AU - Shiga, Keiji

AU - Morito, Haruhiko

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) — “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2019

PY - 2019/7/1

Y1 - 2019/7/1

N2 - The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.

AB - The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.

KW - Directional solidification

KW - Grain boundary

KW - Multicrystalline Si

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SP - 46

EP - 50

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

Abstract

Keywords

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