TY - JOUR
T1 - A 1.1-V regulator-stabilized 21.4-GHz VCO and a 115% frequency-range dynamic divider for k-band wireless communication
AU - Nakamura, Takahiro
AU - Masuda, Toru
AU - Shiramizu, Nobuhiro
AU - Nakamura, Akihiro
AU - Washio, Katsuyoshi
N1 - Funding Information:
Manuscript received December 19, 2011; revised May 30, 2012; accepted June 06, 2012. Date of publication July 20, 2012; date of current version August 28, 2012. This work was supported in part by the Ministry of Internal Affairs and Communications of the Japanese Government.
PY - 2012
Y1 - 2012
N2 - A 21.4-GHz 1.1-V regulator-stabilized voltage-controlled oscillator (VCO) with a dual-transformer configuration and a 115% frequency-range dynamic dividerboth based on 0.18-μ m SiGe BiCMOS technologywere developed. As for the VCO, the combination of two types of transformers, which exhibit high input impedance and capacitive-input impedance, respectively, provides both wide frequency-tuning range and low phase noise. The measured phase noise of the VCO at a 1-MHz offset frequency is-109 dBc/Hz with 11.1-mW dc power dissipation (including the regulator). The figure of merit of the VCO is-192 dBc/Hz, which is the best value among 20-GHz-class silicon-based VCOs (to the best of the authors' knowledge). As for the divider, a two-stage single-balanced mixer reduces dc power and increases operation frequency range. The measured operation frequency of the divider is from 7 to 26 GHz while dissipating only 1.15-mW dc power and occupying a small area (0.004 mm 2). These performance results indicate that the proposed VCO and the divider are suitable for low-s-power transceivers of quasi-millimeter-wave wireless communication systems.
AB - A 21.4-GHz 1.1-V regulator-stabilized voltage-controlled oscillator (VCO) with a dual-transformer configuration and a 115% frequency-range dynamic dividerboth based on 0.18-μ m SiGe BiCMOS technologywere developed. As for the VCO, the combination of two types of transformers, which exhibit high input impedance and capacitive-input impedance, respectively, provides both wide frequency-tuning range and low phase noise. The measured phase noise of the VCO at a 1-MHz offset frequency is-109 dBc/Hz with 11.1-mW dc power dissipation (including the regulator). The figure of merit of the VCO is-192 dBc/Hz, which is the best value among 20-GHz-class silicon-based VCOs (to the best of the authors' knowledge). As for the divider, a two-stage single-balanced mixer reduces dc power and increases operation frequency range. The measured operation frequency of the divider is from 7 to 26 GHz while dissipating only 1.15-mW dc power and occupying a small area (0.004 mm 2). These performance results indicate that the proposed VCO and the divider are suitable for low-s-power transceivers of quasi-millimeter-wave wireless communication systems.
KW - Dividers
KW - SiGe BiCMOS
KW - microwave and millimeter-wave circuits
KW - transformers
KW - voltage-controlled oscillator (VCO)
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U2 - 10.1109/TMTT.2012.2206400
DO - 10.1109/TMTT.2012.2206400
M3 - Article
AN - SCOPUS:84867575814
VL - 60
SP - 2823
EP - 2832
JO - IRE Transactions on Microwave Theory and Techniques
JF - IRE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 9
M1 - 6246653
ER -