TY - GEN
T1 - A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications
AU - Tominari, T.
AU - Miura, M.
AU - Shimamoto, H.
AU - Arai, M.
AU - Yoshida, Y.
AU - Sato, H.
AU - Aoki, T.
AU - Nonami, H.
AU - Wada, S.
AU - Hosoe, H.
AU - Washio, K.
AU - Hashimoto, T.
PY - 2007
Y1 - 2007
N2 - A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.
AB - A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.
KW - Complementary SIGe BICMOS
KW - High breakdown voltage
KW - Process integration
KW - SiGe PNP
UR - http://www.scopus.com/inward/record.url?scp=39049151681&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=39049151681&partnerID=8YFLogxK
U2 - 10.1109/BIPOL.2007.4351834
DO - 10.1109/BIPOL.2007.4351834
M3 - Conference contribution
AN - SCOPUS:39049151681
SN - 9781424410194
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 38
EP - 41
BT - Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
T2 - 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
Y2 - 30 September 2007 through 2 October 2007
ER -