A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

T. Tominari, M. Miura, H. Shimamoto, M. Arai, Y. Yoshida, H. Sato, T. Aoki, H. Nonami, S. Wada, H. Hosoe, K. Washio, T. Hashimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.

Original languageEnglish
Title of host publicationProceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages38-41
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA, United States
Duration: 2007 Sep 302007 Oct 2

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Other

Other2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
Country/TerritoryUnited States
CityBoston, MA
Period07/9/3007/10/2

Keywords

  • Complementary SIGe BICMOS
  • High breakdown voltage
  • Process integration
  • SiGe PNP

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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