A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

T. Tominari; M. Miura; H. Shimamoto; M. Arai; Y. Yoshida; H. Sato; T. Aoki; H. Nonami; S. Wada; H. Hosoe; K. Washio; T. Hashimoto

doi:10.1109/BIPOL.2007.4351834

A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

T. Tominari, M. Miura, H. Shimamoto, M. Arai, Y. Yoshida, H. Sato, T. Aoki, H. Nonami, S. Wada, H. Hosoe, K. Washio, T. Hashimoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A manufacturable 10V-BV_ce/15GHz -f_T complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.

Original language	English
Title of host publication	Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages	38-41
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2007.4351834
Publication status	Published - 2007
Externally published	Yes
Event	2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA, United States Duration: 2007 Sep 30 → 2007 Oct 2

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Other

Other	2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
Country/Territory	United States
City	Boston, MA
Period	07/9/30 → 07/10/2

Keywords

Complementary SIGe BICMOS
High breakdown voltage
Process integration
SiGe PNP

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/BIPOL.2007.4351834

Cite this

Tominari, T., Miura, M., Shimamoto, H., Arai, M., Yoshida, Y., Sato, H., Aoki, T., Nonami, H., Wada, S., Hosoe, H., Washio, K., & Hashimoto, T. (2007). A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 38-41). [4351834] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351834

A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. / Tominari, T.; Miura, M.; Shimamoto, H.; Arai, M.; Yoshida, Y.; Sato, H.; Aoki, T.; Nonami, H.; Wada, S.; Hosoe, H.; Washio, K.; Hashimoto, T.

Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 38-41 4351834 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tominari, T, Miura, M, Shimamoto, H, Arai, M, Yoshida, Y, Sato, H, Aoki, T, Nonami, H, Wada, S, Hosoe, H, Washio, K & Hashimoto, T 2007, A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. in Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting., 4351834, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 38-41, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM, Boston, MA, United States, 07/9/30. https://doi.org/10.1109/BIPOL.2007.4351834

Tominari T, Miura M, Shimamoto H, Arai M, Yoshida Y, Sato H et al. A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 38-41. 4351834. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351834

Tominari, T. ; Miura, M. ; Shimamoto, H. ; Arai, M. ; Yoshida, Y. ; Sato, H. ; Aoki, T. ; Nonami, H. ; Wada, S. ; Hosoe, H. ; Washio, K. ; Hashimoto, T. / A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. pp. 38-41 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

@inproceedings{b38c13bdc4ae4a68a55e09058e0f915c,

title = "A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications",

abstract = "A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.",

keywords = "Complementary SIGe BICMOS, High breakdown voltage, Process integration, SiGe PNP",

author = "T. Tominari and M. Miura and H. Shimamoto and M. Arai and Y. Yoshida and H. Sato and T. Aoki and H. Nonami and S. Wada and H. Hosoe and K. Washio and T. Hashimoto",

year = "2007",

doi = "10.1109/BIPOL.2007.4351834",

language = "English",

isbn = "9781424410194",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

pages = "38--41",

booktitle = "Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

note = "2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM ; Conference date: 30-09-2007 Through 02-10-2007",

}

TY - GEN

T1 - A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

AU - Tominari, T.

AU - Miura, M.

AU - Shimamoto, H.

AU - Arai, M.

AU - Yoshida, Y.

AU - Sato, H.

AU - Aoki, T.

AU - Nonami, H.

AU - Wada, S.

AU - Hosoe, H.

AU - Washio, K.

AU - Hashimoto, T.

PY - 2007

Y1 - 2007

N2 - A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.

AB - A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.

KW - Complementary SIGe BICMOS

KW - High breakdown voltage

KW - Process integration

KW - SiGe PNP

UR - http://www.scopus.com/inward/record.url?scp=39049151681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39049151681&partnerID=8YFLogxK

U2 - 10.1109/BIPOL.2007.4351834

DO - 10.1109/BIPOL.2007.4351834

M3 - Conference contribution

AN - SCOPUS:39049151681

SN - 9781424410194

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 38

EP - 41

BT - Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

T2 - 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM

Y2 - 30 September 2007 through 2 October 2007

ER -

A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

Abstract

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Keywords

ASJC Scopus subject areas

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