A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

T. Tominari; M. Miura; H. Shimamoto; M. Arai; Y. Yoshida; H. Sato; T. Aoki; H. Nonami; S. Wada; H. Hosoe; K. Washio; T. Hashimoto

doi:10.1109/BIPOL.2007.4351834

A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

T. Tominari, M. Miura, H. Shimamoto, M. Arai, Y. Yoshida, H. Sato, T. Aoki, H. Nonami, S. Wada, H. Hosoe, K. Washio, T. Hashimoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A manufacturable 10V-BV_ce/15GHz -f_T complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.

Original language	English
Title of host publication	Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages	38-41
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2007.4351834
Publication status	Published - 2007
Externally published	Yes
Event	2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA, United States Duration: 2007 Sep 30 → 2007 Oct 2

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Other

Other	2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
Country/Territory	United States
City	Boston, MA
Period	07/9/30 → 07/10/2

Keywords

Complementary SIGe BICMOS
High breakdown voltage
Process integration
SiGe PNP

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/BIPOL.2007.4351834

Cite this

Tominari, T., Miura, M., Shimamoto, H., Arai, M., Yoshida, Y., Sato, H., Aoki, T., Nonami, H., Wada, S., Hosoe, H., Washio, K., & Hashimoto, T. (2007). A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 38-41). [4351834] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351834

A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. / Tominari, T.; Miura, M.; Shimamoto, H. et al.

Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 38-41 4351834 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tominari, T, Miura, M, Shimamoto, H, Arai, M, Yoshida, Y, Sato, H, Aoki, T, Nonami, H, Wada, S, Hosoe, H, Washio, K & Hashimoto, T 2007, A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. in Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting., 4351834, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 38-41, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM, Boston, MA, United States, 07/9/30. https://doi.org/10.1109/BIPOL.2007.4351834

Tominari T, Miura M, Shimamoto H, Arai M, Yoshida Y, Sato H et al. A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 38-41. 4351834. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351834

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abstract = "A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.",

keywords = "Complementary SIGe BICMOS, High breakdown voltage, Process integration, SiGe PNP",

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AU - Yoshida, Y.

AU - Sato, H.

AU - Aoki, T.

AU - Nonami, H.

AU - Wada, S.

AU - Hosoe, H.

AU - Washio, K.

AU - Hashimoto, T.

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AB - A manufacturable 10V-BVce/15GHz -fT complementary SiGe BiCMOS foundry process was developed for high performance multi media applications. A novel Si Ge profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz·V.

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A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

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Keywords

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