Abstract
The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5×7.5μm2 pixel, 1/3" VGA sensor fabricated in a 0.35μm 3M2P CMOS process achieves a 100dB dynamic range with no image lag, 0.15mVrms random noise and 0.15mV fixed pattern noise.
Original language | English |
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Article number | 19.4 |
Pages (from-to) | 288-289 |
Number of pages | 2 |
Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
Volume | 48 |
Publication status | Published - 2005 Dec 6 |
Event | 2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States Duration: 2005 Feb 6 → 2005 Feb 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering