A 100dB DR CMOS Image Sensor Using a Lateral Overflow Integration Capacitor

Shigetoshi Sugawa, Nana Akahane, Satoru Adachi, Kazuya Mori, Toshiyuki Ishiuchi, Koichi Mizobuchi

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5×7.5μm2 pixel, 1/3" VGA sensor fabricated in a 0.35μm 3M2P CMOS process achieves a 100dB dynamic range with no image lag, 0.15mVrms random noise and 0.15mV fixed pattern noise.

Original languageEnglish
Article number19.4
Pages (from-to)288-289
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume48
Publication statusPublished - 2005 Dec 6
Event2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 2005 Feb 62005 Feb 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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