A 1. 9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer

Masatoshi Nakayama, Kenichi Horiguchi, Kazuya Yamamoto, Yutaka Yoshii, Shigeru Sugiyama, Noriharu Suematsu, Tadashi Takagi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The 1C employs a negative voltage generator for use of single voltage DC power supply. The HPA provides an output power of 21. 5dBm, with an ACPR of -55dBc and an efficiency of 35%. The LNA has a noise figure of 1. 6 dB and a gain of 14 dB with current of 2. 3mA, The newly developed active cascode FET mixer has a high IIP3 of -IdBm with a high conversion gain of 10 dB and low consumption current of 2. 3 mA. The 1C is characterized by high performance for RF front-end of PHS handheld terminals. The 1C is available in a 7. 0mmx6. 4mmxl. lmm plastic package.

Original languageEnglish
Pages (from-to)717-724
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE82-C
Issue number5
Publication statusPublished - 1999 Jan 1
Externally publishedYes

Keywords

  • Cascode fet
  • Gaas mmic
  • Low distortion
  • Mixer
  • Single-chip front-end

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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