A 1. 9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer

Masatoshi Nakayama; Kenichi Horiguchi; Kazuya Yamamoto; Yutaka Yoshii; Shigeru Sugiyama; Noriharu Suematsu; Tadashi Takagi

A 1. 9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer

Masatoshi Nakayama, Kenichi Horiguchi, Kazuya Yamamoto, Yutaka Yoshii, Shigeru Sugiyama, Noriharu Suematsu, Tadashi Takagi

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The 1C employs a negative voltage generator for use of single voltage DC power supply. The HPA provides an output power of 21. 5dBm, with an ACPR of -55dBc and an efficiency of 35%. The LNA has a noise figure of 1. 6 dB and a gain of 14 dB with current of 2. 3mA, The newly developed active cascode FET mixer has a high IIP3 of -IdBm with a high conversion gain of 10 dB and low consumption current of 2. 3 mA. The 1C is characterized by high performance for RF front-end of PHS handheld terminals. The 1C is available in a 7. 0mmx6. 4mmxl. lmm plastic package.

Original language	English
Pages (from-to)	717-724
Number of pages	8
Journal	IEICE Transactions on Electronics
Volume	E82-C
Issue number	5
Publication status	Published - 1999
Externally published	Yes

Keywords

Cascode fet
Gaas mmic
Low distortion
Mixer
Single-chip front-end

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "A 1. 9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer",

abstract = "We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The 1C employs a negative voltage generator for use of single voltage DC power supply. The HPA provides an output power of 21. 5dBm, with an ACPR of -55dBc and an efficiency of 35%. The LNA has a noise figure of 1. 6 dB and a gain of 14 dB with current of 2. 3mA, The newly developed active cascode FET mixer has a high IIP3 of -IdBm with a high conversion gain of 10 dB and low consumption current of 2. 3 mA. The 1C is characterized by high performance for RF front-end of PHS handheld terminals. The 1C is available in a 7. 0mmx6. 4mmxl. lmm plastic package.",

keywords = "Cascode fet, Gaas mmic, Low distortion, Mixer, Single-chip front-end",

author = "Masatoshi Nakayama and Kenichi Horiguchi and Kazuya Yamamoto and Yutaka Yoshii and Shigeru Sugiyama and Noriharu Suematsu and Tadashi Takagi",

year = "1999",

language = "English",

volume = "E82-C",

pages = "717--724",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "5",

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T1 - A 1. 9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer

AU - Nakayama, Masatoshi

AU - Horiguchi, Kenichi

AU - Yamamoto, Kazuya

AU - Yoshii, Yutaka

AU - Sugiyama, Shigeru

AU - Suematsu, Noriharu

AU - Takagi, Tadashi

PY - 1999

Y1 - 1999

N2 - We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The 1C employs a negative voltage generator for use of single voltage DC power supply. The HPA provides an output power of 21. 5dBm, with an ACPR of -55dBc and an efficiency of 35%. The LNA has a noise figure of 1. 6 dB and a gain of 14 dB with current of 2. 3mA, The newly developed active cascode FET mixer has a high IIP3 of -IdBm with a high conversion gain of 10 dB and low consumption current of 2. 3 mA. The 1C is characterized by high performance for RF front-end of PHS handheld terminals. The 1C is available in a 7. 0mmx6. 4mmxl. lmm plastic package.

AB - We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The 1C employs a negative voltage generator for use of single voltage DC power supply. The HPA provides an output power of 21. 5dBm, with an ACPR of -55dBc and an efficiency of 35%. The LNA has a noise figure of 1. 6 dB and a gain of 14 dB with current of 2. 3mA, The newly developed active cascode FET mixer has a high IIP3 of -IdBm with a high conversion gain of 10 dB and low consumption current of 2. 3 mA. The 1C is characterized by high performance for RF front-end of PHS handheld terminals. The 1C is available in a 7. 0mmx6. 4mmxl. lmm plastic package.

KW - Cascode fet

KW - Gaas mmic

KW - Low distortion

KW - Mixer

KW - Single-chip front-end

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SN - 0916-8524

VL - E82-C

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JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 5

ER -

A 1. 9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer

Abstract

Keywords

ASJC Scopus subject areas

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