A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL

Katsuyoshi Washio, Masao Kondo, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto, Takashi Harada

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-μm-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.

Original languageEnglish
Pages (from-to)1989-1994
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number9
DOIs
Publication statusPublished - 2001 Sep
Externally publishedYes

Keywords

  • Bipolar transistors
  • Emitter coupled logic
  • Epitaxial growth
  • Heterojunctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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