Abstract
A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-μm-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.
Original language | English |
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Pages (from-to) | 1989-1994 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 48 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2001 Sep |
Externally published | Yes |
Keywords
- Bipolar transistors
- Emitter coupled logic
- Epitaxial growth
- Heterojunctions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering