A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL

Katsuyoshi Washio; Masao Kondo; Eiji Ohue; Katsuya Oda; Reiko Hayami; Masamichi Tanabe; Hiromi Shimamoto; Takashi Harada

doi:10.1109/16.944187

A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL

Katsuyoshi Washio, Masao Kondo, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto, Takashi Harada

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-μm-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.

Original language	English
Pages (from-to)	1989-1994
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	9
DOIs	https://doi.org/10.1109/16.944187
Publication status	Published - 2001 Sep
Externally published	Yes

Keywords

Bipolar transistors
Emitter coupled logic
Epitaxial growth
Heterojunctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL. / Washio, Katsuyoshi; Kondo, Masao; Ohue, Eiji; Oda, Katsuya; Hayami, Reiko; Tanabe, Masamichi; Shimamoto, Hiromi; Harada, Takashi.

In: IEEE Transactions on Electron Devices, Vol. 48, No. 9, 09.2001, p. 1989-1994.

Research output: Contribution to journal › Article › peer-review

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AU - Washio, Katsuyoshi

AU - Kondo, Masao

AU - Ohue, Eiji

AU - Oda, Katsuya

AU - Hayami, Reiko

AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

AU - Harada, Takashi

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N2 - A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-μm-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.

AB - A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-μm-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology, and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.

KW - Bipolar transistors

KW - Emitter coupled logic

KW - Epitaxial growth

KW - Heterojunctions

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