A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, T. Harada

Research output: Contribution to journalConference article

51 Citations (Scopus)

Abstract

A 0.2μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) with high quality passive elements was developed using SOI on a high resistivity substrate. The SiGe HBTs exhibit high frequency, high speed capability and a fast ECL-gate delay of 6.7 ps. Chemical mechanical polishing was done to planarize the W and inter insulators.

Original languageEnglish
Pages (from-to)741-744
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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