A 0.2-μm 180-GHz-f max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, Eiji Ohue, Hiromi Shimamoto, Katsuya Oda, Reiko Hayami, Yukihiro Kiyota, Masamichi Tanabe, Masao Kondo, Takashi Hashimoto, Takashi Harada

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


A technology for combining 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs) with CMOS transistors and high-quality passive elements has been developed for use in microwave wireless and optical communication systems. The technology has been applied to fabricate devices on a 200-mm SOI wafer based on a high-resistivity substrate (SOI/HRS). The fabrication process is almost completely compatible with the existing 0.2-μm bipolar-CMOS process because of the essential similarity of the two processes. SiGe HBTs with shallow-trench isolations (STIs) and deep-trench isolations (DTIs) and Ti-salicide electrodes exhibited high-frequency and high-speed capabilities with an f max of 180 GHz and and ECL-gate delay of 6.7 ps, along with good controllability and reliability and high yield. A high-breakdown-voltage HBT that could produce large output swings for the interface circuit was successfully added. CMOS devices (with gate lengths of 0.25 μm for nMOS and 0.3 μm for pMOS) exhibited excellent subthreshold slopes. Poly-Si resistors with a quasi-layer-by-layer structure had a low temperature coefficient. Varactors were constructed from the collector-base junctions of the SiGe HBTs. MIM capacitors were formed between the first and second metal layers by using plasma SiO 2 as an insulator. High-Q octagonal spiral inductors were fabricated by using a 3-μm thick fourth metal layer.

Original languageEnglish
Pages (from-to)271-278
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 2002 Feb
Externally publishedYes


  • BiCMOS integrated circuits
  • Bipolar transistors
  • Emitter coupled logic
  • Epitaxial growth
  • Heterojunctions
  • High-speed integrated circuits
  • MMICs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'A 0.2-μm 180-GHz-f max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications'. Together they form a unique fingerprint.

Cite this