95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes

K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai

Research output: Contribution to journalConference articlepeer-review

24 Citations (Scopus)

Abstract

A static frequency divider and a multiplexer operating up to 50 GHz and at 40 Gb/s, respectively, are used for optical-fiber link systems operating at a 40 Gb/s data rate in global communication applications. The digital circuits are fabricated in self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBT) with self-aligned stacked metal/IDP (SMI) electrodes. The HBTs provide a 95 GHz cutoff frequency and 8 ps emitter-coupled logic gate delay in Si technology.

Original languageEnglish
Pages (from-to)312-313, 453
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
Duration: 1998 Feb 51998 Feb 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '95 GHz f<sub>T</sub> self-aligned selective epitaxial SiGe HBT with SMI electrodes'. Together they form a unique fingerprint.

Cite this