95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes

K. Washio; E. Ohue; K. Oda; M. Tanabe; H. Shimamoto; T. Onai

95 GHz f_T self-aligned selective epitaxial SiGe HBT with SMI electrodes

K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai

Research output: Contribution to journal › Conference article › peer-review

Abstract

A static frequency divider and a multiplexer operating up to 50 GHz and at 40 Gb/s, respectively, are used for optical-fiber link systems operating at a 40 Gb/s data rate in global communication applications. The digital circuits are fabricated in self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBT) with self-aligned stacked metal/IDP (SMI) electrodes. The HBTs provide a 95 GHz cutoff frequency and 8 ps emitter-coupled logic gate delay in Si technology.

Original language	English
Pages (from-to)	312-313, 453
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA Duration: 1998 Feb 5 → 1998 Feb 7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes",

abstract = "A static frequency divider and a multiplexer operating up to 50 GHz and at 40 Gb/s, respectively, are used for optical-fiber link systems operating at a 40 Gb/s data rate in global communication applications. The digital circuits are fabricated in self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBT) with self-aligned stacked metal/IDP (SMI) electrodes. The HBTs provide a 95 GHz cutoff frequency and 8 ps emitter-coupled logic gate delay in Si technology.",

author = "K. Washio and E. Ohue and K. Oda and M. Tanabe and H. Shimamoto and T. Onai",

year = "1998",

month = jan,

day = "1",

language = "English",

pages = "312--313, 453",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC ; Conference date: 05-02-1998 Through 07-02-1998",

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TY - JOUR

T1 - 95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes

AU - Washio, K.

AU - Ohue, E.

AU - Oda, K.

AU - Tanabe, M.

AU - Shimamoto, H.

AU - Onai, T.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A static frequency divider and a multiplexer operating up to 50 GHz and at 40 Gb/s, respectively, are used for optical-fiber link systems operating at a 40 Gb/s data rate in global communication applications. The digital circuits are fabricated in self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBT) with self-aligned stacked metal/IDP (SMI) electrodes. The HBTs provide a 95 GHz cutoff frequency and 8 ps emitter-coupled logic gate delay in Si technology.

AB - A static frequency divider and a multiplexer operating up to 50 GHz and at 40 Gb/s, respectively, are used for optical-fiber link systems operating at a 40 Gb/s data rate in global communication applications. The digital circuits are fabricated in self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBT) with self-aligned stacked metal/IDP (SMI) electrodes. The HBTs provide a 95 GHz cutoff frequency and 8 ps emitter-coupled logic gate delay in Si technology.

UR - http://www.scopus.com/inward/record.url?scp=0031710316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031710316&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031710316

SP - 312-313, 453

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

T2 - Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC

Y2 - 5 February 1998 through 7 February 1998

ER -

95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes

Abstract

ASJC Scopus subject areas

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95 GHz f_T self-aligned selective epitaxial SiGe HBT with SMI electrodes