Abstract
A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.
Original language | English |
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Title of host publication | European Solid-State Device Research Conference |
Publisher | IEEE Computer Society |
Pages | 439-442 |
Number of pages | 4 |
ISBN (Electronic) | 2914601018 |
DOIs | |
Publication status | Published - 2001 Jan 1 |
Externally published | Yes |
Event | 31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 2001 Sep 11 → 2001 Sep 13 |
Other
Other | 31st European Solid-State Device Research Conference, ESSDERC 2001 |
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Country/Territory | Germany |
City | Nuremberg |
Period | 01/9/11 → 01/9/13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality