92-GHz-dynamic and 72-GHz-static frequency dividers using 5.4-ps-ECL self-aligned SEG SiGe HBTs

Katsuyoshi Washio, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages439-442
Number of pages4
ISBN (Electronic)2914601018
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
Duration: 2001 Sep 112001 Sep 13

Other

Other31st European Solid-State Device Research Conference, ESSDERC 2001
CountryGermany
CityNuremberg
Period01/9/1101/9/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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