92-GHz-dynamic and 72-GHz-static frequency dividers using 5.4-ps-ECL self-aligned SEG SiGe HBTs

Katsuyoshi Washio; E. Ohue; K. Oda; R. Hayami; M. Tanabe; H. Shimamoto

doi:10.1109/ESSDERC.2001.195295

92-GHz-dynamic and 72-GHz-static frequency dividers using 5.4-ps-ECL self-aligned SEG SiGe HBTs

Katsuyoshi Washio, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	439-442
Number of pages	4
ISBN (Electronic)	2914601018
DOIs	https://doi.org/10.1109/ESSDERC.2001.195295
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 2001 Sep 11 → 2001 Sep 13

Other

Other	31st European Solid-State Device Research Conference, ESSDERC 2001
Country	Germany
City	Nuremberg
Period	01/9/11 → 01/9/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2001.195295

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Washio, K, Ohue, E, Oda, K, Hayami, R, Tanabe, M & Shimamoto, H 2001, 92-GHz-dynamic and 72-GHz-static frequency dividers using 5.4-ps-ECL self-aligned SEG SiGe HBTs. in European Solid-State Device Research Conference. IEEE Computer Society, pp. 439-442, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 01/9/11. https://doi.org/10.1109/ESSDERC.2001.195295

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abstract = "A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.",

author = "Katsuyoshi Washio and E. Ohue and K. Oda and R. Hayami and M. Tanabe and H. Shimamoto",

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doi = "10.1109/ESSDERC.2001.195295",

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AU - Oda, K.

AU - Hayami, R.

AU - Tanabe, M.

AU - Shimamoto, H.

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AB - A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.

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