860GHz rate asymmetric colliding pulse modelocked diode lasers

T. Shimizu; I. Ogura; H. Yokoyama

doi:10.1049/el:19971266

860GHz rate asymmetric colliding pulse modelocked diode lasers

T. Shimizu, I. Ogura, H. Yokoyama

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The repetition frequency of modelocked laser diodes was increased to 860GHz. This modelocking frequency was controlled simply by adjusting the position of a single saturable absorber in the asymmetric colliding pulse device geometry.

Original language	English
Pages (from-to)	1868-1869
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	22
DOIs	https://doi.org/10.1049/el:19971266
Publication status	Published - 1997 Oct 23
Externally published	Yes

Keywords

Laser modelocking
Semiconductor junction lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19971266

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title = "860GHz rate asymmetric colliding pulse modelocked diode lasers",

abstract = "The repetition frequency of modelocked laser diodes was increased to 860GHz. This modelocking frequency was controlled simply by adjusting the position of a single saturable absorber in the asymmetric colliding pulse device geometry.",

keywords = "Laser modelocking, Semiconductor junction lasers",

author = "T. Shimizu and I. Ogura and H. Yokoyama",

year = "1997",

month = oct,

day = "23",

doi = "10.1049/el:19971266",

language = "English",

volume = "33",

pages = "1868--1869",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - 860GHz rate asymmetric colliding pulse modelocked diode lasers

AU - Shimizu, T.

AU - Ogura, I.

AU - Yokoyama, H.

PY - 1997/10/23

Y1 - 1997/10/23

N2 - The repetition frequency of modelocked laser diodes was increased to 860GHz. This modelocking frequency was controlled simply by adjusting the position of a single saturable absorber in the asymmetric colliding pulse device geometry.

AB - The repetition frequency of modelocked laser diodes was increased to 860GHz. This modelocking frequency was controlled simply by adjusting the position of a single saturable absorber in the asymmetric colliding pulse device geometry.

KW - Laser modelocking

KW - Semiconductor junction lasers

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U2 - 10.1049/el:19971266

DO - 10.1049/el:19971266

M3 - Article

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 22

ER -

860GHz rate asymmetric colliding pulse modelocked diode lasers

Abstract

Keywords

ASJC Scopus subject areas

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