82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs

K. Washio; E. Ohue; K. Oda; R. Hayami; M. Tanabe; H. Shimamoto; T. Harada; M. Kondo

82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs

K. Washio, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto, T. Harada, M. Kondo

Research output: Contribution to journal › Conference article › peer-review

Abstract

A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.

Original language	English
Pages (from-to)	210-211
Number of pages	2
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 2000
Externally published	Yes
Event	2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States Duration: 2000 Feb 7 → 2000 Feb 9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs",

abstract = "A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.",

author = "K. Washio and E. Ohue and K. Oda and R. Hayami and M. Tanabe and H. Shimamoto and T. Harada and M. Kondo",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC ; Conference date: 07-02-2000 Through 09-02-2000",

year = "2000",

language = "English",

pages = "210--211",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - 82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs

AU - Washio, K.

AU - Ohue, E.

AU - Oda, K.

AU - Hayami, R.

AU - Tanabe, M.

AU - Shimamoto, H.

AU - Harada, T.

AU - Kondo, M.

PY - 2000

Y1 - 2000

N2 - A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.

AB - A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.

UR - http://www.scopus.com/inward/record.url?scp=0034429729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034429729&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034429729

SP - 210

EP - 211

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

T2 - 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC

Y2 - 7 February 2000 through 9 February 2000

ER -

82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs

Abstract

ASJC Scopus subject areas

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