Abstract
A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.
| Original language | English |
|---|---|
| Pages (from-to) | 210-211 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
| Publication status | Published - 2000 Dec 1 |
| Externally published | Yes |
| Event | 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States Duration: 2000 Feb 7 → 2000 Feb 9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Washio, K., Ohue, E., Oda, K., Hayami, R., Tanabe, M., Shimamoto, H., Harada, T., & Kondo, M. (2000). 82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 210-211.