82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs

K. Washio, E. Ohue, K. Oda, R. Hayami, M. Tanabe, H. Shimamoto, T. Harada, M. Kondo

Research output: Contribution to journalConference article

36 Citations (Scopus)

Abstract

A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.

Original languageEnglish
Pages (from-to)210-211
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States
Duration: 2000 Feb 72000 Feb 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Washio, K., Ohue, E., Oda, K., Hayami, R., Tanabe, M., Shimamoto, H., Harada, T., & Kondo, M. (2000). 82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 210-211.