80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, E. Sano

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

An 80Gbit/s optoelectronic delayed flip-flop circuit which uses resonant tunnelling diodes and a uni-travelling-carrier photodiode is reported. The circuit design, which suppresses the effect of the AC current in the RTD pair, is the key to achieving such highspeed flip-flop operation. The monolithically fabricated circuit successfully operates at 80Gbit/s while consuming 7.68 mW, and is the fastest flip-flop circuit ever reported.

Original languageEnglish
Pages (from-to)1376-1377
Number of pages2
JournalElectronics Letters
Volume35
Issue number16
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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