Abstract
The authors report an 80Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double-layer interconnection process with a low-permittivity insulator. The record operating data rate was measured on a 3in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time.
| Original language | English |
|---|---|
| Pages (from-to) | 113-114 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1998 Jan 8 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Otsuji, T., Murata, K., Enoki, T., & Umeda, Y. (1998). 80Gbit/s multiplexer IC using InAAs/InGaAs/InP HEMTs. Electronics Letters, 34(1), 113-114. https://doi.org/10.1049/el:19980001