800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer

Noriharu Suematsu, M. Ono, S. Sugiyama, S. Kubo, M. Uesugi, K. Hasegawa, K. Hiroshige, Y. Iyama, O. Ishida

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in it's low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st. stage of LNA and MOSFET as the 2nd. stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP3 with 3 V/13.7 mA d.c. power and -10 dBm LO power.

Original languageEnglish
Pages (from-to)689-692
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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