800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer

Noriharu Suematsu; M. Ono; S. Sugiyama; S. Kubo; M. Uesugi; K. Hasegawa; K. Hiroshige; Y. Iyama; O. Ishida

800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer

Noriharu Suematsu, M. Ono, S. Sugiyama, S. Kubo, M. Uesugi, K. Hasegawa, K. Hiroshige, Y. Iyama, O. Ishida

Research output: Contribution to journal › Conference article › peer-review

Abstract

Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in it's low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st. stage of LNA and MOSFET as the 2nd. stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP₃ with 3 V/13.7 mA d.c. power and -10 dBm LO power.

Original language	English
Pages (from-to)	689-692
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer",

abstract = "Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in it's low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st. stage of LNA and MOSFET as the 2nd. stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP3 with 3 V/13.7 mA d.c. power and -10 dBm LO power.",

author = "Noriharu Suematsu and M. Ono and S. Sugiyama and S. Kubo and M. Uesugi and K. Hasegawa and K. Hiroshige and Y. Iyama and O. Ishida",

year = "1998",

month = jan,

day = "1",

language = "English",

volume = "2",

pages = "689--692",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 07-06-1998 Through 12-06-1998",

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TY - JOUR

T1 - 800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer

AU - Suematsu, Noriharu

AU - Ono, M.

AU - Sugiyama, S.

AU - Kubo, S.

AU - Uesugi, M.

AU - Hasegawa, K.

AU - Hiroshige, K.

AU - Iyama, Y.

AU - Ishida, O.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in it's low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st. stage of LNA and MOSFET as the 2nd. stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP3 with 3 V/13.7 mA d.c. power and -10 dBm LO power.

AB - Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in it's low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st. stage of LNA and MOSFET as the 2nd. stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP3 with 3 V/13.7 mA d.c. power and -10 dBm LO power.

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M3 - Conference article

AN - SCOPUS:0031624243

VL - 2

SP - 689

EP - 692

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

T2 - Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 7 June 1998 through 12 June 1998

ER -

800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer

Abstract

ASJC Scopus subject areas

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