Abstract
Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in it's low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st. stage of LNA and MOSFET as the 2nd. stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP3 with 3 V/13.7 mA d.c. power and -10 dBm LO power.
Original language | English |
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Pages (from-to) | 689-692 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 2 |
Publication status | Published - 1998 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics