75% inverse magnetoresistance at room temperature in Fe4 N/MgO/CoFeB magnetic tunnel junctions fabricated on Cu underlayer

Yosuke Komasaki, Masakiyo Tsunoda, Shinji Isogami, Migaku Takahashi

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

Pseudo-single-crystal Cu underlayer (UL) with thermal tolerance was obtained on bare Si wafer by employing a diffusion-blocking layer. Fe4 N layer fabricated on the Cu UL has an epitaxial relationship and a large grain diameter. Magnetic tunnel junctions in a stacking sequence of Fe4 N/MgO/CoFeB exhibited an inverse tunnel magnetoresistance (TMR) effect at room temperature. The largest magnitude of the TMR ratio, -75.1%, was obtained at bias voltage Vb =-250 mV, where electrons flow from CoFeB to Fe4 N. The large inverse TMR ratio is due to the improvement of the crystallinity of the Fe4 N film because of the small lattice misfit between Fe4 N and Cu.

Original languageEnglish
Article number07C928
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009 Apr 27

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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