A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.
|Number of pages||4|
|Journal||Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium|
|Publication status||Published - 2000 Jan 1|
|Event||2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Boston, MA, USA|
Duration: 2000 May 11 → 2000 Jun 13
ASJC Scopus subject areas