67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

Katsuyoshi Washio; Reiko Hayami; Eiji Ohue; Katsuya Oda; Masamichi Tanabe; Hiromi Shimamoto; Masao Kondo

67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

Katsuyoshi Washio, Reiko Hayami, Eiji Ohue, Katsuya Oda, Masamichi Tanabe, Hiromi Shimamoto, Masao Kondo

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
Publication status	Published - 2000 Jan 1
Externally published	Yes
Event	2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Boston, MA, USA Duration: 2000 May 11 → 2000 Jun 13

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs",

abstract = "A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.",

author = "Katsuyoshi Washio and Reiko Hayami and Eiji Ohue and Katsuya Oda and Masamichi Tanabe and Hiromi Shimamoto and Masao Kondo",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "31--34",

journal = "IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers",

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note = "2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 11-05-2000 Through 13-06-2000",

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T1 - 67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

AU - Washio, Katsuyoshi

AU - Hayami, Reiko

AU - Ohue, Eiji

AU - Oda, Katsuya

AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

AU - Kondo, Masao

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.

AB - A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.

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M3 - Conference article

AN - SCOPUS:0033720572

SN - 1097-2633

SP - 31

EP - 34

JO - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

JF - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

T2 - 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 11 May 2000 through 13 June 2000

ER -

67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

Abstract

ASJC Scopus subject areas

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