Abstract
A 67-GHz 1/4 static frequency divider using 0.2-μm self-aligned selective-epitaxial-growth SiGe heterqjunction bipolar transistors, with a 122-GHz cutoff frequency, a 163-GHz maximum oscillation frequency, and an average emitter coupled logic gate delay time of 5.65 ps, was developed. The pretracking master-slave toggle flip-flop (MS-TFF) of the divider increases the maximum operating frequency to about 15% higher than that of a conventional MS-TFF, yet the power consumption of the divider is 175 mW, which is 1/5 that of comparable dividers, at a supply voltage of -5.2 V. Index Terms -.
Original language | English |
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Pages (from-to) | 3-8 |
Number of pages | 6 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 49 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 |
Externally published | Yes |
Event | 2000 Radio-Frequency Integrated Circuits (RFIC) Conference and Automatic Radio Frequency Techniques Group (ARFTG) Meeting - Boston, MA, United States Duration: 2000 Jun 12 → 2000 Jun 16 |
Keywords
- Bipolar transistors
- Emitter coupled logic
- Epitaxial growth
- Frequency conversion
- Heterojunctions
- Millimeter-wave bipolar integrated circuits
- Mimics
- Optical communication
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering