Based on molecular-beam-epitaxy scanning-tunneling-microscopy (STM) observations, we report a 6×2 reconstructed surface formed in the initial stage of highly strained InAs growth on GaAs(001). Atomic-resolution STM images show several unique features in its structure and morphology, compared to other InAs or GaAs(001) reconstructions. We have documented that the formation of the 6×2 surface is critical for desirable layer-by-layer growth and proposed a dimer-based structure model.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics