6×2 surface reconstruction for the two-dimensional heteroepitaxial growth of InAs on GaAs

Q. Xue, T. Sakurai

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Based on molecular-beam-epitaxy scanning-tunneling-microscopy (STM) observations, we report a 6×2 reconstructed surface formed in the initial stage of highly strained InAs growth on GaAs(001). Atomic-resolution STM images show several unique features in its structure and morphology, compared to other InAs or GaAs(001) reconstructions. We have documented that the formation of the 6×2 surface is critical for desirable layer-by-layer growth and proposed a dimer-based structure model.

    Original languageEnglish
    Pages (from-to)R6862-R6865
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume57
    Issue number12
    DOIs
    Publication statusPublished - 1998 Jan 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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