60ns 1Mb nonvolatile ferroelectric memory with non-driven cell plate line write/read scheme

Hiroki Koike, Tetsuya Otsuki, Tohru Kimura, Masao Fukuma, Yoshihiro Hayashi, Yukihiko Maejima, Kazushi Amanuma, Nobuhiro Tanabe, Takeo Matsuki, Shinobu Saito, Tsuneo Takeuchi, Souta Kobayashi, Takemitsu Kunio, Takashi Hase, Yoichi Miyasaka, al et al

Research output: Contribution to journalConference articlepeer-review

23 Citations (Scopus)

Abstract

A nonvolatile ferroelectric RAM (WFRAM) based on a 1-transistor and 1-capacitor (IT/C) memory cell has potential for fast-access time and small-chip size comparable with DRAM. However, previously reported NVFRAMs are still slower that ordinary DRAMs, since driving a cell plate line NVFRAM is slow. Fortunately, using a non-driven cell plate line write/read (NDP) scheme could lead to NVFRAMs wit as fast access time as DRAMs.

Original languageEnglish
Pages (from-to)368-369
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume39
Publication statusPublished - 1996 Feb 1
Externally publishedYes
EventProceedings of the 1996 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA
Duration: 1996 Feb 81996 Feb 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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