6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes

Tomonori Shigematsu, Noriharu Suematsu, Norio Takeuchi, Yoshitada Iyama, Akihito Mizobuchi

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)

Abstract

A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.

Original languageEnglish
Pages (from-to)527-530
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
Duration: 1997 Jun 81997 Jun 13

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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