Abstract
A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 527-530 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| Publication status | Published - 1997 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA Duration: 1997 Jun 8 → 1997 Jun 13 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering