6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes

Tomonori Shigematsu; Noriharu Suematsu; Norio Takeuchi; Yoshitada Iyama; Akihito Mizobuchi

6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes

Tomonori Shigematsu, Noriharu Suematsu, Norio Takeuchi, Yoshitada Iyama, Akihito Mizobuchi

Research output: Contribution to journal › Conference article › peer-review

Abstract

A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.

Original language	English
Pages (from-to)	527-530
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA Duration: 1997 Jun 8 → 1997 Jun 13

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes",

abstract = "A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.",

author = "Tomonori Shigematsu and Noriharu Suematsu and Norio Takeuchi and Yoshitada Iyama and Akihito Mizobuchi",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "2",

pages = "527--530",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 08-06-1997 Through 13-06-1997",

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TY - JOUR

T1 - 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes

AU - Shigematsu, Tomonori

AU - Suematsu, Noriharu

AU - Takeuchi, Norio

AU - Iyama, Yoshitada

AU - Mizobuchi, Akihito

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.

AB - A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030683262&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030683262

VL - 2

SP - 527

EP - 530

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

T2 - Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 8 June 1997 through 13 June 1997

ER -