Abstract
In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.
Original language | English |
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Pages (from-to) | 165-169 |
Number of pages | 5 |
Journal | IEICE Electronics Express |
Volume | 7 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2010 Feb 10 |
Keywords
- 5 GHz
- 90 nm silicon complementary metal oxide semiconductor (Si-CMOS)
- Film bulk acoustic resonator(FBAR)
- Low phase noise
- Oscillator
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering