5GHZ band low phase noise SI-CMOS oscillator using FBAR

Shoichi Tanifuji; Tuan Thanh Ta; Suguru Kameda; Tadashi Takagi; Kazuo Tsubouchi

doi:10.1587/elex.7.165

5GHZ band low phase noise SI-CMOS oscillator using FBAR

Shoichi Tanifuji, Tuan Thanh Ta, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

Original language	English
Pages (from-to)	165-169
Number of pages	5
Journal	IEICE Electronics Express
Volume	7
Issue number	3
DOIs	https://doi.org/10.1587/elex.7.165
Publication status	Published - 2010 Feb 10

Keywords

5 GHz
90 nm silicon complementary metal oxide semiconductor (Si-CMOS)
Film bulk acoustic resonator(FBAR)
Low phase noise
Oscillator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1587/elex.7.165

Cite this

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abstract = "In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.",

keywords = "5 GHz, 90 nm silicon complementary metal oxide semiconductor (Si-CMOS), Film bulk acoustic resonator(FBAR), Low phase noise, Oscillator",

author = "Shoichi Tanifuji and Ta, {Tuan Thanh} and Suguru Kameda and Tadashi Takagi and Kazuo Tsubouchi",

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language = "English",

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AU - Ta, Tuan Thanh

AU - Kameda, Suguru

AU - Takagi, Tadashi

AU - Tsubouchi, Kazuo

PY - 2010/2/10

Y1 - 2010/2/10

N2 - In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

AB - In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

KW - 5 GHz

KW - 90 nm silicon complementary metal oxide semiconductor (Si-CMOS)

KW - Film bulk acoustic resonator(FBAR)

KW - Low phase noise

KW - Oscillator

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5GHZ band low phase noise SI-CMOS oscillator using FBAR

Abstract

Keywords

ASJC Scopus subject areas

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