5GHZ band low phase noise SI-CMOS oscillator using FBAR

Shoichi Tanifuji, Tuan Thanh Ta, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalIEICE Electronics Express
Volume7
Issue number3
DOIs
Publication statusPublished - 2010 Feb 10

Keywords

  • 5 GHz
  • 90 nm silicon complementary metal oxide semiconductor (Si-CMOS)
  • Film bulk acoustic resonator(FBAR)
  • Low phase noise
  • Oscillator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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