5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate

Shintaro Shinjo, Koji Tsutsumi, Kensuke Nakajima, Hiro Omi Ueda, Kazutomi Mori, Morishige Hieda, Jun Koide, Masahiro Inoue, Noriharu Suematsu

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


A fully integrated SiGe-MMIC transceiver having a power amplifier (PA), a transmit / receive switch (T/R SW), and a voltage controlled oscillator (VCO) is developed for electric toll collection system (ETC) terminals. To improve the isolation between the PA and the VCO, the back-polish technique of the silicon substrate (127μm thickness) is employed. Electro-magnetic simulation shows that a MMIC of 127μm thickness achieves the isolation improvement of 12.3dB compared with that of conventional 300μm thickness. As a result, the USB/LSB unbalance of the transmitted amplitude shift keying (ASK) signal can be reduced from 4.2dB to 1.2dB at 13dBin output power. The MMIC transceiver fabricated in 0.35μm SiGe BiCMOS process achieves the maximum output power of 15.5dBm with the adjacent channel power ratio (ACPR) of -33.5dBc.

Original languageEnglish
Article number4015363
Pages (from-to)2039-2042
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: 2006 Jun 112006 Jun 16


  • MMICs
  • Power amplifiers
  • Silicon
  • Switches
  • Transceivers
  • Voltage controlled oscillators

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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