5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate

Shintaro Shinjo; Koji Tsutsumi; Kensuke Nakajima; Hiro Omi Ueda; Kazutomi Mori; Morishige Hieda; Jun Koide; Masahiro Inoue; Noriharu Suematsu

doi:10.1109/MWSYM.2006.249855

5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate

Shintaro Shinjo, Koji Tsutsumi, Kensuke Nakajima, Hiro Omi Ueda, Kazutomi Mori, Morishige Hieda, Jun Koide, Masahiro Inoue, Noriharu Suematsu

Research output: Contribution to journal › Conference article

12 Citations (Scopus)

Abstract

A fully integrated SiGe-MMIC transceiver having a power amplifier (PA), a transmit / receive switch (T/R SW), and a voltage controlled oscillator (VCO) is developed for electric toll collection system (ETC) terminals. To improve the isolation between the PA and the VCO, the back-polish technique of the silicon substrate (127μm thickness) is employed. Electro-magnetic simulation shows that a MMIC of 127μm thickness achieves the isolation improvement of 12.3dB compared with that of conventional 300μm thickness. As a result, the USB/LSB unbalance of the transmitted amplitude shift keying (ASK) signal can be reduced from 4.2dB to 1.2dB at 13dBin output power. The MMIC transceiver fabricated in 0.35μm SiGe BiCMOS process achieves the maximum output power of 15.5dBm with the adjacent channel power ratio (ACPR) of -33.5dBc.

Original language	English
Article number	4015363
Pages (from-to)	2039-2042
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249855
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 2006 Jun 11 → 2006 Jun 16

Keywords

MMICs
Power amplifiers
Silicon
Switches
Transceivers
Voltage controlled oscillators

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2006.249855

Fingerprint Dive into the research topics of '5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate'. Together they form a unique fingerprint.

Cite this

Shinjo, S., Tsutsumi, K., Nakajima, K., Ueda, H. O., Mori, K., Hieda, M., Koide, J., Inoue, M., & Suematsu, N. (2006). 5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate. IEEE MTT-S International Microwave Symposium Digest, 2039-2042. [4015363]. https://doi.org/10.1109/MWSYM.2006.249855

5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate. / Shinjo, Shintaro; Tsutsumi, Koji; Nakajima, Kensuke; Ueda, Hiro Omi; Mori, Kazutomi; Hieda, Morishige; Koide, Jun; Inoue, Masahiro; Suematsu, Noriharu.

In: IEEE MTT-S International Microwave Symposium Digest, 01.12.2006, p. 2039-2042.

Research output: Contribution to journal › Conference article

@article{1cd52c23a05e440c8131a4750840d29d,

title = "5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate",

abstract = "A fully integrated SiGe-MMIC transceiver having a power amplifier (PA), a transmit / receive switch (T/R SW), and a voltage controlled oscillator (VCO) is developed for electric toll collection system (ETC) terminals. To improve the isolation between the PA and the VCO, the back-polish technique of the silicon substrate (127μm thickness) is employed. Electro-magnetic simulation shows that a MMIC of 127μm thickness achieves the isolation improvement of 12.3dB compared with that of conventional 300μm thickness. As a result, the USB/LSB unbalance of the transmitted amplitude shift keying (ASK) signal can be reduced from 4.2dB to 1.2dB at 13dBin output power. The MMIC transceiver fabricated in 0.35μm SiGe BiCMOS process achieves the maximum output power of 15.5dBm with the adjacent channel power ratio (ACPR) of -33.5dBc.",

keywords = "MMICs, Power amplifiers, Silicon, Switches, Transceivers, Voltage controlled oscillators",

author = "Shintaro Shinjo and Koji Tsutsumi and Kensuke Nakajima and Ueda, {Hiro Omi} and Kazutomi Mori and Morishige Hieda and Jun Koide and Masahiro Inoue and Noriharu Suematsu",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/MWSYM.2006.249855",

language = "English",

pages = "2039--2042",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

}

TY - JOUR

T1 - 5.8GHz ETC SiGe-MMIC transceiver having improved PA-VCO isolation with thin silicon substrate

AU - Shinjo, Shintaro

AU - Tsutsumi, Koji

AU - Nakajima, Kensuke

AU - Ueda, Hiro Omi

AU - Mori, Kazutomi

AU - Hieda, Morishige

AU - Koide, Jun

AU - Inoue, Masahiro

AU - Suematsu, Noriharu

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A fully integrated SiGe-MMIC transceiver having a power amplifier (PA), a transmit / receive switch (T/R SW), and a voltage controlled oscillator (VCO) is developed for electric toll collection system (ETC) terminals. To improve the isolation between the PA and the VCO, the back-polish technique of the silicon substrate (127μm thickness) is employed. Electro-magnetic simulation shows that a MMIC of 127μm thickness achieves the isolation improvement of 12.3dB compared with that of conventional 300μm thickness. As a result, the USB/LSB unbalance of the transmitted amplitude shift keying (ASK) signal can be reduced from 4.2dB to 1.2dB at 13dBin output power. The MMIC transceiver fabricated in 0.35μm SiGe BiCMOS process achieves the maximum output power of 15.5dBm with the adjacent channel power ratio (ACPR) of -33.5dBc.

AB - A fully integrated SiGe-MMIC transceiver having a power amplifier (PA), a transmit / receive switch (T/R SW), and a voltage controlled oscillator (VCO) is developed for electric toll collection system (ETC) terminals. To improve the isolation between the PA and the VCO, the back-polish technique of the silicon substrate (127μm thickness) is employed. Electro-magnetic simulation shows that a MMIC of 127μm thickness achieves the isolation improvement of 12.3dB compared with that of conventional 300μm thickness. As a result, the USB/LSB unbalance of the transmitted amplitude shift keying (ASK) signal can be reduced from 4.2dB to 1.2dB at 13dBin output power. The MMIC transceiver fabricated in 0.35μm SiGe BiCMOS process achieves the maximum output power of 15.5dBm with the adjacent channel power ratio (ACPR) of -33.5dBc.

KW - MMICs

KW - Power amplifiers

KW - Silicon

KW - Switches

KW - Transceivers

KW - Voltage controlled oscillators

UR - http://www.scopus.com/inward/record.url?scp=34250378763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250378763&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2006.249855

DO - 10.1109/MWSYM.2006.249855

M3 - Conference article

AN - SCOPUS:34250378763

SP - 2039

EP - 2042

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

M1 - 4015363

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -