5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT

E. Ohue; R. Hayami; K. Oda; H. Shimamoto; Katsuyoshi Washio

5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT

E. Ohue, R. Hayami, K. Oda, H. Shimamoto, Katsuyoshi Washio

Research output: Contribution to conference › Paper

Abstract

An optimized selective-epitaxial-growth (SEG) structure in a self-aligned SiGe heterojunction bipolar transistor (HBT) was developed. Using this structure, a static frequency divider demonstrated a frequency upto 71 GHz. It was observed that cutoff frequency and collector capacitance did not depend on width of the SEG SiGe layer (W_epi) and the base resistance reduced at large W_epi.

Original language	English
Pages	26-29
Number of pages	4
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING - Minneapolis, MN, United States Duration: 2001 Sep 30 → 2001 Oct 2

Other

Other	2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING
Country	United States
City	Minneapolis, MN
Period	01/9/30 → 01/10/2

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Ohue, E., Hayami, R., Oda, K., Shimamoto, H., & Washio, K. (2001). 5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT. 26-29. Paper presented at 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, Minneapolis, MN, United States.

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abstract = "An optimized selective-epitaxial-growth (SEG) structure in a self-aligned SiGe heterojunction bipolar transistor (HBT) was developed. Using this structure, a static frequency divider demonstrated a frequency upto 71 GHz. It was observed that cutoff frequency and collector capacitance did not depend on width of the SEG SiGe layer (Wepi) and the base resistance reduced at large Wepi.",

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AU - Ohue, E.

AU - Hayami, R.

AU - Oda, K.

AU - Shimamoto, H.

AU - Washio, Katsuyoshi

PY - 2001/1/1

Y1 - 2001/1/1

N2 - An optimized selective-epitaxial-growth (SEG) structure in a self-aligned SiGe heterojunction bipolar transistor (HBT) was developed. Using this structure, a static frequency divider demonstrated a frequency upto 71 GHz. It was observed that cutoff frequency and collector capacitance did not depend on width of the SEG SiGe layer (Wepi) and the base resistance reduced at large Wepi.

AB - An optimized selective-epitaxial-growth (SEG) structure in a self-aligned SiGe heterojunction bipolar transistor (HBT) was developed. Using this structure, a static frequency divider demonstrated a frequency upto 71 GHz. It was observed that cutoff frequency and collector capacitance did not depend on width of the SEG SiGe layer (Wepi) and the base resistance reduced at large Wepi.

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