5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT

E. Ohue, R. Hayami, K. Oda, H. Shimamoto, Katsuyoshi Washio

Research output: Contribution to conferencePaper

18 Citations (Scopus)

Abstract

An optimized selective-epitaxial-growth (SEG) structure in a self-aligned SiGe heterojunction bipolar transistor (HBT) was developed. Using this structure, a static frequency divider demonstrated a frequency upto 71 GHz. It was observed that cutoff frequency and collector capacitance did not depend on width of the SEG SiGe layer (Wepi) and the base resistance reduced at large Wepi.

Original languageEnglish
Pages26-29
Number of pages4
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING - Minneapolis, MN, United States
Duration: 2001 Sep 302001 Oct 2

Other

Other2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING
CountryUnited States
CityMinneapolis, MN
Period01/9/3001/10/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ohue, E., Hayami, R., Oda, K., Shimamoto, H., & Washio, K. (2001). 5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT. 26-29. Paper presented at 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, Minneapolis, MN, United States.