Abstract
An optimized selective-epitaxial-growth (SEG) structure in a self-aligned SiGe heterojunction bipolar transistor (HBT) was developed. Using this structure, a static frequency divider demonstrated a frequency upto 71 GHz. It was observed that cutoff frequency and collector capacitance did not depend on width of the SEG SiGe layer (Wepi) and the base resistance reduced at large Wepi.
Original language | English |
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Pages | 26-29 |
Number of pages | 4 |
Publication status | Published - 2001 Jan 1 |
Externally published | Yes |
Event | 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING - Minneapolis, MN, United States Duration: 2001 Sep 30 → 2001 Oct 2 |
Other
Other | 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING |
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Country/Territory | United States |
City | Minneapolis, MN |
Period | 01/9/30 → 01/10/2 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering