5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.

Original languageEnglish
Title of host publication41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467384858
DOIs
Publication statusPublished - 2016 Nov 28
Event41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark
Duration: 2016 Sep 252016 Sep 30

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2016-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Other

Other41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
CountryDenmark
CityCopenhagen
Period16/9/2516/9/30

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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