TY - GEN
T1 - 500 nm-sized Ni-TSVwith aspect ratio 20 for future 3D-LSIs-A low-cost electroless-Ni plating approach
AU - Murugesan, M.
AU - Fukushima, T.
AU - Koyanagi, M.
N1 - Funding Information:
This work was supported by “Project to develop cross-sectoral technologies for IOT promotion” commissioned by the New Energy and Industrial Technology Development Organization (NEDO). The authors thank K. Higashi, K. Tsumura, K. Nakamura and K. Uchida of Toshiba corp. for their immense co-operation. Also the authors thank Dr. J.C. Bea and H. Hashimoto of GINTI, Dr. Y. Lee of T-Micro for their help in lithography, and related processes. We thank Dr. A. Takeuchi in carrying out X-ray CT experiments at Spring-8, under the proposal number 2019A1540.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - A 500 nm-width nickel-through-Si-via (Ni-TSV) for future 3D-LSI/IC integration at chip-to-wafer/wafer-to-wafer level was proposed and fabricated successfully on 12-inch LSI wafer. An aspect ratio of 20 for 500 nm-width Ni-TSVs has been realized. A modified electroless-Ni plating process was employed to seamlessly and nearly completely fill these Ni-TSVs. We were able to fabricate Ni-TSVs successfully with reproducibility by using via-last approach.
AB - A 500 nm-width nickel-through-Si-via (Ni-TSV) for future 3D-LSI/IC integration at chip-to-wafer/wafer-to-wafer level was proposed and fabricated successfully on 12-inch LSI wafer. An aspect ratio of 20 for 500 nm-width Ni-TSVs has been realized. A modified electroless-Ni plating process was employed to seamlessly and nearly completely fill these Ni-TSVs. We were able to fabricate Ni-TSVs successfully with reproducibility by using via-last approach.
UR - http://www.scopus.com/inward/record.url?scp=85071025219&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85071025219&partnerID=8YFLogxK
U2 - 10.1109/ASMC.2019.8791781
DO - 10.1109/ASMC.2019.8791781
M3 - Conference contribution
AN - SCOPUS:85071025219
T3 - ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
BT - 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2019
Y2 - 6 May 2019 through 9 May 2019
ER -