500 nm-sized Ni-TSVwith aspect ratio 20 for future 3D-LSIs-A low-cost electroless-Ni plating approach

M. Murugesan, T. Fukushima, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A 500 nm-width nickel-through-Si-via (Ni-TSV) for future 3D-LSI/IC integration at chip-to-wafer/wafer-to-wafer level was proposed and fabricated successfully on 12-inch LSI wafer. An aspect ratio of 20 for 500 nm-width Ni-TSVs has been realized. A modified electroless-Ni plating process was employed to seamlessly and nearly completely fill these Ni-TSVs. We were able to fabricate Ni-TSVs successfully with reproducibility by using via-last approach.

Original languageEnglish
Title of host publication2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538676011
DOIs
Publication statusPublished - 2019 May
Event30th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2019 - Saratoga Springs, United States
Duration: 2019 May 62019 May 9

Publication series

NameASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
Volume2019-May
ISSN (Print)1078-8743

Conference

Conference30th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2019
CountryUnited States
CitySaratoga Springs
Period19/5/619/5/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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