5 GHz band low phase noise Si-CMOS oscillator with flip-chip mounted FBAR

Tuan Thanh Ta, Kei Ando, Shoichi Tanifuji, Suguru Kameda, Noriharu Suematsu, Tadashi Takagi, Kazuo Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low phase noise 5 GHz oscillator is designed with 90 nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. FBAR was mounted by using stud bump bonding instead of wire bonding to reduce parasitic inductance. This FBAR oscillator has phase noise of lower than -108dBc/Hz at 100 kHz offset.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages1039-1042
Number of pages4
Publication statusPublished - 2010 Dec 1
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 2010 Dec 72010 Dec 10

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Other

Other2010 Asia-Pacific Microwave Conference, APMC 2010
CountryJapan
CityYokohama
Period10/12/710/12/10

Keywords

  • 5 GHz
  • 90 nm silicon complementary metal oxide semiconductor (Si-CMOS)
  • film bulk acoustic resonator (FBAR)
  • low phase noise
  • oscillator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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