@inproceedings{488e503e7920463fb2db9553743beaaf,
title = "4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions",
abstract = "We have investigated solution growth of 4H-SiC under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions where we added Al to stabilize both growth surface morphology and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed.",
keywords = "4H-SiC, Co-doping, Conductivity, Solution growth, Surface morphology",
author = "Takeshi Mitani and Naoyoshi Komatsu and Tetsuo Takahashi and Tomohisa Kato and Toru Ujihara and Yuji Matsumoto and Kazuhisa Kurashige and Hajime Okumura",
note = "Publisher Copyright: {\textcopyright} (2015) Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.9",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "9--13",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
}