4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions

Takeshi Mitani; Naoyoshi Komatsu; Tetsuo Takahashi; Tomohisa Kato; Toru Ujihara; Yuji Matsumoto; Kazuhisa Kurashige; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.9

4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

ENG - Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

We have investigated solution growth of 4H-SiC under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions where we added Al to stabilize both growth surface morphology and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2014
Editors	Didier Chaussende, Gabriel Ferro
Publisher	Trans Tech Publications Ltd
Pages	9-13
Number of pages	5
ISBN (Print)	9783038354789
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.821-823.9
Publication status	Published - 2015 Jan 1
Event	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: 2014 Sep 21 → 2014 Sep 25

Publication series

Name	Materials Science Forum
Volume	821-823
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Country	France
City	Grenoble
Period	14/9/21 → 14/9/25

Keywords

4H-SiC
Co-doping
Conductivity
Solution growth
Surface morphology

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

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Cite this

Mitani, T., Komatsu, N., Takahashi, T., Kato, T., Ujihara, T., Matsumoto, Y., Kurashige, K., & Okumura, H. (2015). 4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 9-13). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.9

4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions. / Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 9-13 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mitani, T, Komatsu, N, Takahashi, T, Kato, T, Ujihara, T, Matsumoto, Y, Kurashige, K & Okumura, H 2015, 4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 9-13, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 14/9/21. https://doi.org/10.4028/www.scientific.net/MSF.821-823.9

Mitani, Takeshi ; Komatsu, Naoyoshi ; Takahashi, Tetsuo ; Kato, Tomohisa ; Ujihara, Toru ; Matsumoto, Yuji ; Kurashige, Kazuhisa ; Okumura, Hajime. / 4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions. Silicon Carbide and Related Materials 2014. editor / Didier Chaussende ; Gabriel Ferro. Trans Tech Publications Ltd, 2015. pp. 9-13 (Materials Science Forum).

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AU - Ujihara, Toru

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KW - Conductivity

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