4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

We have investigated solution growth of 4H-SiC under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions where we added Al to stabilize both growth surface morphology and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages9-13
Number of pages5
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015 Jan 1
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

Keywords

  • 4H-SiC
  • Co-doping
  • Conductivity
  • Solution growth
  • Surface morphology

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Mitani, T., Komatsu, N., Takahashi, T., Kato, T., Ujihara, T., Matsumoto, Y., Kurashige, K., & Okumura, H. (2015). 4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 9-13). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.9