46GHz differential power amplifier with 11GHz bandwidth using on-chip transformer

Mizuki Motoyoshi, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The millimeter-wave differential power amplifier using on-chip transformer is proposed to achieve high saturated power. To realize the high freqency operation, cross couple capatitor MOSFET is applied. The parasitic element is reduce the performance of the circuit. In this paper on-chip transformer is used as balun and impedance-matching network. The component loss is reduced by unifying the function of two components. Moreover, the layout is optimized to reduce the parasitic element and lead line of the MOSFET. The proposed power amplifier is fablicated using 1P12M 45nm CMOS process. The 46GHz center frequency with 11GHz bandwidth with peak gain of 8.5dB per stage was achieved. The power added efficiency is 18%.

Original languageEnglish
Title of host publicationRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
Subtitle of host publicationSilicon Technology Heats Up for THz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479955039
DOIs
Publication statusPublished - 2014 Oct 21
Event2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China
Duration: 2014 Aug 272014 Aug 30

Publication series

NameRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
CountryChina
CityHefei
Period14/8/2714/8/30

Keywords

  • CMOS
  • high power efficiency
  • millimeter wave
  • power amplifier
  • transformer balun

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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  • Cite this

    Motoyoshi, M., & Fujishima, M. (2014). 46GHz differential power amplifier with 11GHz bandwidth using on-chip transformer. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933263] (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933263