4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

T. Fujii, K. Yoshikawa, T. Koga, A. Nishiura, Y. Takahashi, H. Kakiki, M. Ichijyou, Y. Seki

Research output: Contribution to conferencePaper

17 Citations (Scopus)

Abstract

A 4.5kV-2000A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch- Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn-off capability of 4500A (@ VCC=2600V, Tj=125°C) and the short circuit capability of over 15μs (@ VCC=3000V, Tj=125°C) are successfully achieved.

Original languageEnglish
Pages33-36
Number of pages4
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France
Duration: 2000 May 222000 May 25

Other

Other12th International Symposium on Power Semiconductor Devices and ICs
CountryFrance
CityToulouse
Period00/5/2200/5/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)'. Together they form a unique fingerprint.

  • Cite this

    Fujii, T., Yoshikawa, K., Koga, T., Nishiura, A., Takahashi, Y., Kakiki, H., Ichijyou, M., & Seki, Y. (2000). 4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT). 33-36. Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France.