45° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si

Y. Z. Yoo; P. Ahmet; Zheng Wu Jin; K. Nakajima; T. Chikyow; M. Kawasaki; Y. Konishi; Y. Yonezawa; J. H. Song; H. Koinuma

doi:10.1063/1.1581383

45° rotational epitaxy of SrTiO₃ thin films on sulfide-buffered Si

Y. Z. Yoo, P. Ahmet, Zheng Wu Jin, K. Nakajima, T. Chikyow, M. Kawasaki, Y. Konishi, Y. Yonezawa, J. H. Song, H. Koinuma

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Thin films of SrTiO₃ were grown on sulfide-buffered Si and their rotational epitaxy was examined. At the ZnS/Si interface, a partially disordered region of the buffer layer was observed. The analysis showed that the SrTiO₃ film on ZnS buffered Si has the rotational epitaxy with respect to Si and sharp SrTiO₃/ZnS interface.

Original language	English
Pages (from-to)	4125-4127
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	23
DOIs	https://doi.org/10.1063/1.1581383
Publication status	Published - 2003 Jun 9
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{fba40a7ff5124220acedd359f867a6fc,

title = "45° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si",

abstract = "Thin films of SrTiO3 were grown on sulfide-buffered Si and their rotational epitaxy was examined. At the ZnS/Si interface, a partially disordered region of the buffer layer was observed. The analysis showed that the SrTiO3 film on ZnS buffered Si has the rotational epitaxy with respect to Si and sharp SrTiO3/ZnS interface.",

author = "Yoo, {Y. Z.} and P. Ahmet and Jin, {Zheng Wu} and K. Nakajima and T. Chikyow and M. Kawasaki and Y. Konishi and Y. Yonezawa and Song, {J. H.} and H. Koinuma",

year = "2003",

month = jun,

day = "9",

doi = "10.1063/1.1581383",

language = "English",

volume = "82",

pages = "4125--4127",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - 45° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si

AU - Yoo, Y. Z.

AU - Ahmet, P.

AU - Jin, Zheng Wu

AU - Nakajima, K.

AU - Chikyow, T.

AU - Kawasaki, M.

AU - Konishi, Y.

AU - Yonezawa, Y.

AU - Song, J. H.

AU - Koinuma, H.

PY - 2003/6/9

Y1 - 2003/6/9

N2 - Thin films of SrTiO3 were grown on sulfide-buffered Si and their rotational epitaxy was examined. At the ZnS/Si interface, a partially disordered region of the buffer layer was observed. The analysis showed that the SrTiO3 film on ZnS buffered Si has the rotational epitaxy with respect to Si and sharp SrTiO3/ZnS interface.

AB - Thin films of SrTiO3 were grown on sulfide-buffered Si and their rotational epitaxy was examined. At the ZnS/Si interface, a partially disordered region of the buffer layer was observed. The analysis showed that the SrTiO3 film on ZnS buffered Si has the rotational epitaxy with respect to Si and sharp SrTiO3/ZnS interface.

UR - http://www.scopus.com/inward/record.url?scp=0037491251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037491251&partnerID=8YFLogxK

U2 - 10.1063/1.1581383

DO - 10.1063/1.1581383

M3 - Article

AN - SCOPUS:0037491251

SN - 0003-6951

VL - 82

SP - 4125

EP - 4127

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

45° rotational epitaxy of SrTiO₃ thin films on sulfide-buffered Si

Abstract

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