45° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si

Y. Z. Yoo, P. Ahmet, Zheng Wu Jin, K. Nakajima, T. Chikyow, M. Kawasaki, Y. Konishi, Y. Yonezawa, J. H. Song, H. Koinuma

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Thin films of SrTiO3 were grown on sulfide-buffered Si and their rotational epitaxy was examined. At the ZnS/Si interface, a partially disordered region of the buffer layer was observed. The analysis showed that the SrTiO3 film on ZnS buffered Si has the rotational epitaxy with respect to Si and sharp SrTiO3/ZnS interface.

Original languageEnglish
Pages (from-to)4125-4127
Number of pages3
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2003 Jun 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of '45° rotational epitaxy of SrTiO<sub>3</sub> thin films on sulfide-buffered Si'. Together they form a unique fingerprint.

Cite this