Thin films of SrTiO3 were grown on sulfide-buffered Si and their rotational epitaxy was examined. At the ZnS/Si interface, a partially disordered region of the buffer layer was observed. The analysis showed that the SrTiO3 film on ZnS buffered Si has the rotational epitaxy with respect to Si and sharp SrTiO3/ZnS interface.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Jun 9|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)