4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.

Osamu Hashimoto; Yoshikazu Takahashi; Humiaki Kirihata; Masahide Watanabe; Osamu Yamada

4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.

Osamu Hashimoto, Yoshikazu Takahashi, Humiaki Kirihata, Masahide Watanabe, Osamu Yamada

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n⁺ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.

Original language	English
Pages (from-to)	915-921
Number of pages	7
Journal	PESC Record - IEEE Annual Power Electronics Specialists Conference
Publication status	Published - 1988 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Modelling and Simulation
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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title = "4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.",

abstract = "A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.",

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T1 - 4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.

AU - Hashimoto, Osamu

AU - Takahashi, Yoshikazu

AU - Kirihata, Humiaki

AU - Watanabe, Masahide

AU - Yamada, Osamu

PY - 1988/12/1

Y1 - 1988/12/1

N2 - A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.

AB - A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.

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M3 - Conference article

AN - SCOPUS:0024139192

SP - 915

EP - 921

JO - PESC Record - IEEE Annual Power Electronics Specialists Conference

JF - PESC Record - IEEE Annual Power Electronics Specialists Conference

SN - 0275-9306

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