4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.

Osamu Hashimoto, Yoshikazu Takahashi, Humiaki Kirihata, Masahide Watanabe, Osamu Yamada

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.

Original languageEnglish
Pages (from-to)915-921
Number of pages7
JournalPESC Record - IEEE Annual Power Electronics Specialists Conference
Publication statusPublished - 1988 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Modelling and Simulation
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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