Abstract
A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.
Original language | English |
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Pages (from-to) | 915-921 |
Number of pages | 7 |
Journal | PESC Record - IEEE Annual Power Electronics Specialists Conference |
Publication status | Published - 1988 |
Externally published | Yes |
ASJC Scopus subject areas
- Modelling and Simulation
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering