4.5 GHz lamb wave device composed of LiNbO3 thin film

Michio Kadota, Takashi Ogami, Kansho Yamamoto, Yasuhiro Negoro, Hikari Tochishita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A high frequency device of 3 GHz or more is required, for instance, for future 4-th generation mobile phone system in Japan. Using a substrate with a high velocity is one method to realize a high frequency elastic device. A Lamb wave has a high velocity when the substrate thickness normalized by a wavelength (λ) of an elastic wave is thin. It is difficult to make a very thin crystal plate in order to realize a high frequency device. The authors have attempted to fabricate a Lamb wave device using a c-axis orientated thin LiNbO3 film deposited by a chemical vapor deposition system (CVD). A Lamb wave resonator composed of a interdigital transducer (IDT)/thin LiNbO 3 film/air gap/base substrate has shown a high frequency of 4.5GHz, which corresponds a high velocity of 14,000m/s, and an excellent characteristics such as an impedance ratio of 52 dB and a wide band of 7.2%.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages333-336
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
Duration: 2009 Jun 72009 Jun 12

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2009 IEEE MTT-S International Microwave Symposium, IMS 2009
CountryUnited States
CityBoston, MA
Period09/6/709/6/12

Keywords

  • Acoustic resonator
  • Thin films
  • Very-high-frequency resonator

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Kadota, M., Ogami, T., Yamamoto, K., Negoro, Y., & Tochishita, H. (2009). 4.5 GHz lamb wave device composed of LiNbO3 thin film. In IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest (pp. 333-336). [5165701] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2009.5165701