400 khz radio-frequency biased electron cyclotron resonance position etching

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A radio frequency (RF) biased electron cyclotron resonance plasma etching technology has been developed to realize efficient ion acceleration in high-density, uniform ECR plasma. 400 kHz RF-biased ECR position etching can achieve uniform and efficient ion acceleration, and prevents charge build-up damage to the thin gate oxide. Conversely, at frequency of more than 700 kHz, the plasma is disturbed by the local discharge between the grounded chamber wall and the substrate holder. Then, the gate oxide breakdown is caused by the stored charge due to the potential difference on the substrate.

Original languageEnglish
Pages (from-to)3154-3158
Number of pages5
JournalJapanese journal of applied physics
Volume30
Issue number11S
DOIs
Publication statusPublished - 1991 Nov
Externally publishedYes

Keywords

  • Charge-up
  • ECR plasma
  • Gate oxide breakdown
  • Radio-frequency bias

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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