40 GHz 7.9 mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs

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7 Citations (Scopus)

Abstract

A low-power current-mode-logic frequency divider integrated circuit (IC) that operated at 40 GHz with a power consumption of 7.9 mW per master-slave flip-flop was fabricated using 0.2 μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors. This IC also operated at 35 GHz from a supply voltage of -2.2 V. To the authors' knowledge this IC consumes the least power of any for operation in the millimetre-waveband that have appeared to date.

Original languageEnglish
Pages (from-to)707-709
Number of pages3
JournalElectronics Letters
Volume38
Issue number14
DOIs
Publication statusPublished - 2002 Jul 4
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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