40-Gb/s IC's for future lightwave communications systems

Taiichii Otsuji, Yuhki Imai, Eiichi Sano, Shunji Kimura, Satoshi Yamaguchi, Mikio Yoneyama, Takatomo Enoki, Yohtaro Umeda

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.

Original languageEnglish
Pages (from-to)1363-1369
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume32
Issue number9
DOIs
Publication statusPublished - 1997 Sep 1
Externally publishedYes

Keywords

  • Demultiplexing
  • Distributed amplifiers
  • Flip-flops
  • MODFET integrated circuits
  • Multiplexing
  • Optical fiber communication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Otsuji, T., Imai, Y., Sano, E., Kimura, S., Yamaguchi, S., Yoneyama, M., Enoki, T., & Umeda, Y. (1997). 40-Gb/s IC's for future lightwave communications systems. IEEE Journal of Solid-State Circuits, 32(9), 1363-1369. https://doi.org/10.1109/4.628741