Abstract
A self-aligned selective-epitaxial SiGe-based heterojunction bipolar transistor (HBT) is used to fabricate a 40 Gb/s optical receiver. The SiGe-based HBT provides low parasitic capacitance and high-frequency characteristics. 3.6fF collector capacitance and 0.6fF substrate capacitance at 5 V reverse bias voltage are obtained. The cutoff frequency and the maximum oscillation frequency of the transistors with an emitter area of 0.14×1.5 μm2 are 92 GHz and 108 GHz at 2 V collector-to-emitter bias, respectively. The early voltage of >100 V is suitable for analog circuits.
Original language | English |
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Pages (from-to) | 314-315, 454 |
Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
Publication status | Published - 1998 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA Duration: 1998 Feb 5 → 1998 Feb 7 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering