Abstract
A 4:1 multiplexer and a 1:4 demultiplexer IC module were developed by using 0.2-μm self-aligned selective-epitaxial-growth SiGe HBTs. For the data retiming, the multiplexer and the demultiplexer include a frequency divider that operates at over 40 GHz. 50-Gb/s operation for the multiplexer and 48-Gb/s operation for the demultiplexer were observed by measurements using on-wafer probes. We concluded that these modules, which mounted the IC on a ceramic substrate with a brass block, are applicable to transmitter and receiver functions of a 40-Gb/s optical transmission system.
| Original language | English |
|---|---|
| Pages (from-to) | 1697-1700 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 1 |
| Publication status | Published - 2001 Dec 1 |
| Externally published | Yes |
| Event | International Microwave Symposium Digest IEEE MTT-S 2001 - Phoenix, AZ, United States Duration: 2001 May 20 → 2001 May 25 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Masuda, T., Ohhata, K. I., Shiramizu, N., Ohue, E., Oda, K., Hayami, R., Shimamoto, H., Kondo, M., Harada, T., & Washio, K. (2001). 40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs. IEEE MTT-S International Microwave Symposium Digest, 1, 1697-1700.