Abstract
A 4:1 multiplexer and a 1:4 demultiplexer IC module were developed by using 0.2-μm self-aligned selective-epitaxial-growth SiGe HBTs. For the data retiming, the multiplexer and the demultiplexer include a frequency divider that operates at over 40 GHz. 50-Gb/s operation for the multiplexer and 48-Gb/s operation for the demultiplexer were observed by measurements using on-wafer probes. We concluded that these modules, which mounted the IC on a ceramic substrate with a brass block, are applicable to transmitter and receiver functions of a 40-Gb/s optical transmission system.
Original language | English |
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Pages (from-to) | 1697-1700 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 1 |
Publication status | Published - 2001 |
Externally published | Yes |
Event | International Microwave Symposium Digest IEEE MTT-S 2001 - Phoenix, AZ, United States Duration: 2001 May 20 → 2001 May 25 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering