Abstract
This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-μm-gate-length InP high electron mobility transistor IC's and a scheme for upgrading toward a terabit-per-second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s. The high-sensitivity operation of the optical receiver (-27.6 dBm @ BER = 10 -9) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode. A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high-speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-bit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation.
Original language | English |
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Pages (from-to) | 1246-1253 |
Number of pages | 8 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 34 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |
Keywords
- Broad-band photodiode
- InP high electron mobility transistor (HEMT)
- Optical fiber communication
ASJC Scopus subject areas
- Electrical and Electronic Engineering