40-Gbit/s TDM Transmission Technologies Based on Ultra-High-Speed IC's

Yutaka Miyamoto, Mikio Yoneyama, Taiichi Otsuji, Kazushige Yonenaga, Naofumi Shimizu

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-μm-gate-length InP high electron mobility transistor IC's and a scheme for upgrading toward a terabit-per-second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s. The high-sensitivity operation of the optical receiver (-27.6 dBm @ BER = 10 -9) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode. A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high-speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-bit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation.

Original languageEnglish
Pages (from-to)1246-1253
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume34
Issue number9
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Keywords

  • Broad-band photodiode
  • InP high electron mobility transistor (HEMT)
  • Optical fiber communication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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