40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

K. Yoshino, K. Wakita, I. Kotaka, S. Kondo, Y. Noguchi, S. Kuwano, N. Takachio, Taiichi Otsuji, Y. Imai, T. Enoki

Research output: Contribution to conference › Paper

4 Citations (Scopus)

Abstract

40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.

Original languageEnglish
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6) - Oslo, Norway
Duration: 1996 Sep 15 → 1996 Sep 19

Other

OtherProceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6)
CityOslo, Norway
Period96/9/15 → 96/9/19

ASJC Scopus subject areas

  • Engineering(all)

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    Yoshino, K., Wakita, K., Kotaka, I., Kondo, S., Noguchi, Y., Kuwano, S., Takachio, N., Otsuji, T., Imai, Y., & Enoki, T. (1996). 40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage. Paper presented at Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6), Oslo, Norway, .