40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

K. Yoshino; K. Wakita; I. Kotaka; S. Kondo; Y. Noguchi; S. Kuwano; N. Takachio; Taiichi Otsuji; Y. Imai; T. Enoki

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

K. Yoshino, K. Wakita, I. Kotaka, S. Kondo, Y. Noguchi, S. Kuwano, N. Takachio, Taiichi Otsuji, Y. Imai, T. Enoki

Research output: Contribution to conference › Paper › peer-review

Abstract

40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V_pp.

Original language	English
Publication status	Published - 1996 Dec 1
Externally published	Yes
Event	Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6) - Oslo, Norway Duration: 1996 Sep 15 → 1996 Sep 19

Other

Other	Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6)
City	Oslo, Norway
Period	96/9/15 → 96/9/19

ASJC Scopus subject areas

Engineering(all)

Cite this

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage. / Yoshino, K.; Wakita, K.; Kotaka, I.; Kondo, S.; Noguchi, Y.; Kuwano, S.; Takachio, N.; Otsuji, Taiichi; Imai, Y.; Enoki, T.

1996. Paper presented at Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6), Oslo, Norway.

Research output: Contribution to conference › Paper › peer-review

Yoshino, K, Wakita, K, Kotaka, I, Kondo, S, Noguchi, Y, Kuwano, S, Takachio, N, Otsuji, T, Imai, Y & Enoki, T 1996, '40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage', Paper presented at Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6), Oslo, Norway, 96/9/15 - 96/9/19.

Yoshino, K. ; Wakita, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y. ; Kuwano, S. ; Takachio, N. ; Otsuji, Taiichi ; Imai, Y. ; Enoki, T. / 40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage. Paper presented at Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6), Oslo, Norway.

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title = "40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage",

abstract = "40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.",

author = "K. Yoshino and K. Wakita and I. Kotaka and S. Kondo and Y. Noguchi and S. Kuwano and N. Takachio and Taiichi Otsuji and Y. Imai and T. Enoki",

year = "1996",

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day = "1",

language = "English",

note = "Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6) ; Conference date: 15-09-1996 Through 19-09-1996",

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T1 - 40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

AU - Yoshino, K.

AU - Wakita, K.

AU - Kotaka, I.

AU - Kondo, S.

AU - Noguchi, Y.

AU - Kuwano, S.

AU - Takachio, N.

AU - Otsuji, Taiichi

AU - Imai, Y.

AU - Enoki, T.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - 40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.

AB - 40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.

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M3 - Paper

AN - SCOPUS:0030316004

T2 - Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6)

Y2 - 15 September 1996 through 19 September 1996

ER -

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

Abstract

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ASJC Scopus subject areas

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