40-Gbit/s InP-based HEMT IC technology for future lightwave communication systems

Research output: Contribution to conferencePaperpeer-review

Abstract

Forty-Gbit/s-class light communications integrated circuits (ICs) have been developed using the InP-based high electron mobility transistors (HEMTs) and have successfully demonstrated as a benchmark for future large-capacity networks. In this paper, a basic 40-Gbit/s optical sender/receiver configuration and typical operating waveforms of HEMT IC modules is presented. Novel high-speed digital circuit designs such as a super-dynamic flip-flop and ultra-broadband analog circuit design of distributed baseband amplifier were incorporated. The fabricated IC chips offer practical speed performance beyond 40 Gbit/s with good yield.

Original languageEnglish
Pages4-5
Number of pages2
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: 1998 Jun 221998 Jun 24

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period98/6/2298/6/24

ASJC Scopus subject areas

  • Engineering(all)

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