40-Gbit/s ICs for future lightwave communications systems

Taiichii Otsuji; Eiichi Sano; Yuhki Imai; Takatomo Enoki

40-Gbit/s ICs for future lightwave communications systems

Taiichii Otsuji, Eiichi Sano, Yuhki Imai, Takatomo Enoki

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-μm gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gbit/s.

Original language	English
Pages	14-17
Number of pages	4
Publication status	Published - 1996 Dec 1
Externally published	Yes
Event	Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA Duration: 1996 Nov 3 → 1996 Nov 6

Other

Other	Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
City	Orlando, FL, USA
Period	96/11/3 → 96/11/6

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "40-Gbit/s ICs for future lightwave communications systems",

abstract = "This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-μm gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gbit/s.",

author = "Taiichii Otsuji and Eiichi Sano and Yuhki Imai and Takatomo Enoki",

year = "1996",

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AU - Otsuji, Taiichii

AU - Sano, Eiichi

AU - Imai, Yuhki

AU - Enoki, Takatomo

PY - 1996/12/1

Y1 - 1996/12/1

N2 - This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-μm gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gbit/s.

AB - This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-μm gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gbit/s.

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T2 - Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium

Y2 - 3 November 1996 through 6 November 1996

ER -

40-Gbit/s ICs for future lightwave communications systems

Abstract

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ASJC Scopus subject areas

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