Abstract
This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-μm gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gbit/s.
Original language | English |
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Pages | 14-17 |
Number of pages | 4 |
Publication status | Published - 1996 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA Duration: 1996 Nov 3 → 1996 Nov 6 |
Other
Other | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
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City | Orlando, FL, USA |
Period | 96/11/3 → 96/11/6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering