3D LSI technology and reliability issues

T. Tanaka, J. Bea, M. Murugesan, K. Lee, T. Fukushima, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

3D integration is the most promising technology to enhance LSI performance beyond scaling theory. 3D LSIs have lots of advantages such as short wiring length, small chip size, and small pin capacitances, which leads to low power dissipation and high processing speed. However, there are still reliability problems to be solved. This paper describes mechanical stresses caused by Cu TSVs and CuSn microbumps and design guideline to minimize stress effects on 3D LSIs.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages184-185
Number of pages2
Publication statusPublished - 2011 Sep 16
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: 2011 Jun 142011 Jun 16

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period11/6/1411/6/16

Keywords

  • 3D-LSI
  • Micro-Raman spectroscopy
  • Stress and Strain
  • Through-Si via (TSV)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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