3D integration of memories including heterogeneous integration

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this invited paper, 3D integration technology of memories including heterogeneous integration is overviewed. Especially, in 3D integration of memory part, 3D NAND/NOR memory, 3D crosspoint memory with ReRAM and PCM, and 3D STT-MRAM are discussed for realizing high density and so on. Moreover, heterogeneous integration is shown from view point of multifunctional capability.

Original languageEnglish
Title of host publicationVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665419345
DOIs
Publication statusPublished - 2021 Apr 19
Event2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan, Province of China
Duration: 2021 Apr 192021 Apr 22

Publication series

NameVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period21/4/1921/4/22

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Control and Optimization

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