3D impurity profiles of doped/intrinsic amorphous-silicon layers composing textured silicon heterojunction solar cells detected by atom probe tomography

Yasuo Shimizu, Bin Han, Naoki Ebisawa, Yoshinari Ichihashi, Taiki Hashiguchi, Hirotaka Katayama, Mitsuhiro Matsumoto, Akira Terakawa, Koji Inoue, Yasuyoshi Nagai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Laser-assisted atom probe tomography was used to identify the impurity distribution in Si heterojunction (SHJ) solar cells composed of thin doped/intrinsic amorphous Si layers on the textured surface of a crystalline Si wafer. A site-specific lift-out technique involving a focused ion beam enabled the selection of a ∼2 2 μm2 area on an arbitrary pyramidal surface. The distributions of B, P and C in the amorphous Si layers introduced by p-type (trimethyl-borane or diborane) or n-type (phosphine) dopant gases were investigated. Standard guidelines for the assessment of the H content in amorphous Si of SHJ solar cells were provided.

Original languageEnglish
Article number126503
JournalApplied Physics Express
Volume13
Issue number12
DOIs
Publication statusPublished - 2020 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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