TY - JOUR
T1 - 3D Bicontinuous Nanoporous Reduced Graphene Oxide for Highly Sensitive Photodetectors
AU - Ito, Yoshikazu
AU - Zhang, Wenfeng
AU - Li, Jinhua
AU - Chang, Haixin
AU - Liu, Pan
AU - Fujita, Takeshi
AU - Tan, Yongwen
AU - Yan, Feng
AU - Chen, Mingwei
N1 - Funding Information:
Y.I. and W.Z. contributed equally to this work. The authors thank Institute for Material Research at Tohoku University for XPS measurements. This work was sponsored by JST-CREST “Phase Interface Science for Highly Efficient Energy Utilization;” the fusion research funds of “World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials,” MEXT, Japan. H.X.C. acknowledges the fundings from National Basic Research Program of China (Grant No. 2015CB258400), National Science Foundation of China (Grant No. 51402118), and HUST. J.H.L. thanks National Natural Science Foundation of China (Grant No. 51203045).
Publisher Copyright:
© 2015 Wiley-VCH Verlag GmbH & Co. KGaA.
PY - 2016/2/23
Y1 - 2016/2/23
N2 - Reduced graphene oxide (RGO) is an important graphene derivative for applications in photonics and optoelectronics because of the band gap created by chemical oxidation. However, most RGO materials made by chemically exfoliated graphite oxide are 2D flakes. Their optoelectronic performance deteriorates significantly as a result of weak light-matter interaction and poor electrical contact between stacking flakes. Here we report a bicontinuous 3D nanoporous RGO (3D np-RGO) with high optoelectronic performance for highly sensitive photodetectors. 3D np-RGO demonstrates a over 40 times higher light absorption than monolayer graphene materials and at least two orders of magnitude higher electron mobility than conventional RGO from discrete RGO flakes. The np-RGO with an optimal reduction state shows ultrahigh photoresponse of 3.10 × 104 A W-1 at room temperature, approximately four orders of magnitude higher than graphene and other graphene derivatives at similar levels of light intensity radiations, and the excellent external quantum efficiency of 1.04 × 107% better than commercial silicon photodetector. The ultrahigh capability of conversing photons to photocurrent originates from strongly enhanced light absorption, facilitated photocarrier transport, and tunable oxygenous defects and reduction states in the 3D interconnected bicontinuous RGO network.
AB - Reduced graphene oxide (RGO) is an important graphene derivative for applications in photonics and optoelectronics because of the band gap created by chemical oxidation. However, most RGO materials made by chemically exfoliated graphite oxide are 2D flakes. Their optoelectronic performance deteriorates significantly as a result of weak light-matter interaction and poor electrical contact between stacking flakes. Here we report a bicontinuous 3D nanoporous RGO (3D np-RGO) with high optoelectronic performance for highly sensitive photodetectors. 3D np-RGO demonstrates a over 40 times higher light absorption than monolayer graphene materials and at least two orders of magnitude higher electron mobility than conventional RGO from discrete RGO flakes. The np-RGO with an optimal reduction state shows ultrahigh photoresponse of 3.10 × 104 A W-1 at room temperature, approximately four orders of magnitude higher than graphene and other graphene derivatives at similar levels of light intensity radiations, and the excellent external quantum efficiency of 1.04 × 107% better than commercial silicon photodetector. The ultrahigh capability of conversing photons to photocurrent originates from strongly enhanced light absorption, facilitated photocarrier transport, and tunable oxygenous defects and reduction states in the 3D interconnected bicontinuous RGO network.
KW - bicontinuous nanoporosity
KW - nanoporous reduced graphene oxide
KW - optoelectronics
KW - photodetectors
KW - photoresponsivity
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U2 - 10.1002/adfm.201504146
DO - 10.1002/adfm.201504146
M3 - Article
AN - SCOPUS:84958794339
VL - 26
SP - 1271
EP - 1277
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 8
ER -