TY - JOUR
T1 - 3D atomic imaging of SiGe system by X-ray fluorescence holography
AU - Hayashi, Koichi
AU - Takahashi, Y.
AU - Matsubara, E.
AU - Nakajima, K.
AU - Usami, N.
N1 - Funding Information:
This work was performed under the approval of the SPring-8 Program Advisory Committee (2001B0613-NDS-np). This study was supported by the Industrial Technology Research Grant Program in '00 from the New Energy and Industrial Development Organization (NEDO) of Japan. Part of this work was financially supported by a Grant-in-Aid for Scientific Research on Priority Areas (B)(2) ``Localized Quantum Structures'' (12130201) from the Ministry of Education, Science, Sports and Culture. We thank Drs Y. Suzuki , Y. Kohmura, and M. Awaji for their technical help.
PY - 2003/5
Y1 - 2003/5
N2 - X-ray fluorescence holography (XFH) provides three-dimensional atomic images around specific elements without any assumption of the structural model. Six X-ray holograms Si0.8Ge0.2/Si at different energies were measured at the synchrotron radiation facility of SPring-8. Si and/or Ge atoms within 0.7 nm of a radius were clearly visible in the atomic images reconstructed from the holograms. From these images, slight displacements of the images at each shell in between Si0.8Ge0.2/Si and the Ge bulk were distinctly revealed. This demonstrated that the XFH method has a great potential to quantitatively analyze a three-dimensional local lattice structure in epitaxial crystals.
AB - X-ray fluorescence holography (XFH) provides three-dimensional atomic images around specific elements without any assumption of the structural model. Six X-ray holograms Si0.8Ge0.2/Si at different energies were measured at the synchrotron radiation facility of SPring-8. Si and/or Ge atoms within 0.7 nm of a radius were clearly visible in the atomic images reconstructed from the holograms. From these images, slight displacements of the images at each shell in between Si0.8Ge0.2/Si and the Ge bulk were distinctly revealed. This demonstrated that the XFH method has a great potential to quantitatively analyze a three-dimensional local lattice structure in epitaxial crystals.
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U2 - 10.1023/A:1023993911437
DO - 10.1023/A:1023993911437
M3 - Article
AN - SCOPUS:0037811334
VL - 14
SP - 459
EP - 462
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 5-7
ER -