310k pixel bipolar imager (BASIS)

Nobuyoshi Tanaka, Seiji Hashimoto, Mahito Shinohara, Shigetoshi Sugawa, Masakazu Morishita, Shigeyuki Matsumoto, Yoshio Nakamura, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

A bipolar imager with an amplification function in each pixel has been developed using BiCMOS technology. The imager, which stores photocarriers in the base regions of the bipolar transistor pixels, is called the base-stored image sensor (BASIS). BASIS-type devices have been faced with three problems: (1)a reset transistor is needed in each pixel to initialize base voltage, (2)nonuniformity of offset voltage appears as fixed patter noise, and (3)blooming is induced by intense light. Effective methods of dealing with these problems have been found. A BASIS imager with 320k pixels in a 2/3-in optical format is described. The device specifications and characteristics of the imager are summarized.

Original languageEnglish
Pages (from-to)96-97
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume32
Publication statusPublished - 1989 Dec 1
Externally publishedYes
EventIEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC 1989) - New York, NY, USA
Duration: 1989 Feb 151989 Feb 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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