310k pixel bipolar imager (BASIS)

Nobuyoshi Tanaka; Seiji Hashimoto; Mahito Shinohara; Shigetoshi Sugawa; Masakazu Morishita; Shigeyuki Matsumoto; Yoshio Nakamura; Tadahiro Ohmi

310k pixel bipolar imager (BASIS)

Nobuyoshi Tanaka, Seiji Hashimoto, Mahito Shinohara, Shigetoshi Sugawa, Masakazu Morishita, Shigeyuki Matsumoto, Yoshio Nakamura, Tadahiro Ohmi

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

A bipolar imager with an amplification function in each pixel has been developed using BiCMOS technology. The imager, which stores photocarriers in the base regions of the bipolar transistor pixels, is called the base-stored image sensor (BASIS). BASIS-type devices have been faced with three problems: (1)a reset transistor is needed in each pixel to initialize base voltage, (2)nonuniformity of offset voltage appears as fixed patter noise, and (3)blooming is induced by intense light. Effective methods of dealing with these problems have been found. A BASIS imager with 320k pixels in a 2/3-in optical format is described. The device specifications and characteristics of the imager are summarized.

Original language	English
Pages (from-to)	96-97
Number of pages	2
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	32
Publication status	Published - 1989 Dec 1
Externally published	Yes
Event	IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC 1989) - New York, NY, USA Duration: 1989 Feb 15 → 1989 Feb 17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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310k pixel bipolar imager (BASIS). / Tanaka, Nobuyoshi; Hashimoto, Seiji; Shinohara, Mahito; Sugawa, Shigetoshi; Morishita, Masakazu; Matsumoto, Shigeyuki; Nakamura, Yoshio; Ohmi, Tadahiro.

In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Vol. 32, 01.12.1989, p. 96-97.

Research output: Contribution to journal › Conference article › peer-review

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T1 - 310k pixel bipolar imager (BASIS)

AU - Tanaka, Nobuyoshi

AU - Hashimoto, Seiji

AU - Shinohara, Mahito

AU - Sugawa, Shigetoshi

AU - Morishita, Masakazu

AU - Matsumoto, Shigeyuki

AU - Nakamura, Yoshio

AU - Ohmi, Tadahiro

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N2 - A bipolar imager with an amplification function in each pixel has been developed using BiCMOS technology. The imager, which stores photocarriers in the base regions of the bipolar transistor pixels, is called the base-stored image sensor (BASIS). BASIS-type devices have been faced with three problems: (1)a reset transistor is needed in each pixel to initialize base voltage, (2)nonuniformity of offset voltage appears as fixed patter noise, and (3)blooming is induced by intense light. Effective methods of dealing with these problems have been found. A BASIS imager with 320k pixels in a 2/3-in optical format is described. The device specifications and characteristics of the imager are summarized.

AB - A bipolar imager with an amplification function in each pixel has been developed using BiCMOS technology. The imager, which stores photocarriers in the base regions of the bipolar transistor pixels, is called the base-stored image sensor (BASIS). BASIS-type devices have been faced with three problems: (1)a reset transistor is needed in each pixel to initialize base voltage, (2)nonuniformity of offset voltage appears as fixed patter noise, and (3)blooming is induced by intense light. Effective methods of dealing with these problems have been found. A BASIS imager with 320k pixels in a 2/3-in optical format is described. The device specifications and characteristics of the imager are summarized.

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