300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

Yukio Suzuki, Hideyuki Fukushi, Masanori Muroyama, Yoshiyuki Hata, Takahiro Nakayama, Rakesh Chand, Hideki Hirano, Yutaka Nonomura, Hirofumi Funabashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.

Original languageEnglish
Title of host publication2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages744-748
Number of pages5
ISBN (Electronic)9781509050789
DOIs
Publication statusPublished - 2017 Feb 23
Event30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
Duration: 2017 Jan 222017 Jan 26

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

Other30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
CountryUnited States
CityLas Vegas
Period17/1/2217/1/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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